The MOS-type DEPFET pixel sensor for the ILC environment

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 565, Issue 1, 2006, Pages 165-171

  Andricek, L ^a,d   Fischer, P ^b   Heinzinger, K ^a,c   Herrmann, S ^b   Herz, D ^d,e,f   Karagounis, M ^c   Kohrs, R ^c   Kruger H ^c   Lechner, P ^c   Lutz, G ^a,d   Moser, H G ^a,d   Peric, I ^b   Reuen, L ^c   Richter, R H ^a,d   Sandow, C ^c   Schnecke, M ^a,d   Schopper, F ^a,b   Struder L ^a,b   Torne E V ^c   Treis, J ^a,b   Trimpl, M ^c   Velthuis, J ^c   Wermes, N ^c   Wolfel S ^a,b   more..

^a MPI HALBLEITERLABOR   (Germany)

^b MAX PLANCK INSTITUT FÜR EXTRATERRESTRISCHE PHYSIK   (Germany)

^c PNSENSOR GMBH   (Germany)

^d MAX PLANCK INSTITUT FÜR PHYSIK   (Germany)

^e UNIVERSITY OF MANNHEIM   (Germany)

^f UNIVERSITY OF BONN   (Germany)

Author keywords

APS; DEPFET; ILC; Ionizing radiation; Radiation tolerance; Vertex detector

Indexed keywords

COLLIDING BEAM ACCELERATORS; ELECTRONS; GAMMA RAYS; IONIZING RADIATION; MOS DEVICES; THRESHOLD VOLTAGE; X RAY ANALYSIS;

INTERNATIONAL LINEAR COLLIDER (ILC); POSITIVE OXIDE CHARGES; RADIATION TOLERANCE; VERTEX DETECTORS;

IMAGE SENSORS;

EID: 33747178346     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2006.05.045     Document Type: Article

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