Hot electron induced hydrogen compensation of boron doped silicon resulting from emitter-base breakdown

Technical Digest - International Electron Devices Meeting, IEDM

Volumn 1992-December, Issue , 1992, Pages 785-788

  Dunkley, J ^a   Ganschow, G ^a   Hannaman, D ^a   Patterson, J ^a   Willard, S ^a   Gopi, P ^a  

^a Silicon Systems Inc   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BORON; ELECTRON DEVICES; NITRIDES; SILICON NITRIDE;

BORON-DOPED SILICON; EMITTER-BASE JUNCTIONS; NITRIDE LAYERS;

HYDROGEN BONDS;

EID: 33747045069     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.1992.307475     Document Type: Conference Paper

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