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Volumn 89, Issue 4, 2006, Pages
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Tritiation of amorphous and crystalline silicon using T 2 gas
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KINECTRICS INC
(Canada)
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Author keywords
[No Author keywords available]
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Indexed keywords
CRYSTALLINE SILICON;
SURFACE LAYERS;
T2 GAS;
TRITIATION;
CONCENTRATION (PROCESS);
CRYSTALLINE MATERIALS;
SURFACE STRUCTURE;
TRITIUM;
VAPOR PRESSURE;
AMORPHOUS SILICON;
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EID: 33746587500
PISSN: 00036951
EISSN: None
Source Type: Journal
DOI: 10.1063/1.2234844 Document Type: Article |
Times cited : (16)
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References (11)
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