Tritiation of amorphous and crystalline silicon using T 2 gas

Applied Physics Letters

Volumn 89, Issue 4, 2006, Pages

  Liu, Baojun ^a   Chen, Kevin P ^a   Kherani, Nazir P ^b   Kosteski, Tome ^b   Costea, Stefan ^b   Zukotynski, Stefan ^b   Antoniazzi, Armando B ^c  

^a PA 15260   (United States)

^b UNIVERSITY OF TORONTO   (Canada)

^c KINECTRICS INC   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINE SILICON; SURFACE LAYERS; T2 GAS; TRITIATION;

CONCENTRATION (PROCESS); CRYSTALLINE MATERIALS; SURFACE STRUCTURE; TRITIUM; VAPOR PRESSURE;

AMORPHOUS SILICON;

EID: 33746587500     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2234844     Document Type: Article

References (11)

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