Vertical-cavity surface-emitting lasers based on submonolayer InGaAs quantum dots

IEEE Journal of Quantum Electronics

Volumn 42, Issue 9, 2006, Pages 851-858

  Blokhin, Sergey A ^a   Maleev, Nikolai A ^a   Kuzmenkov, Alexander G ^b   Sakharov, Alexey V ^a   Kulagina, Marina M ^a   Shernyakov, Yuri M ^a   Novikov, Innokenty I ^a   Maximov, Mikhail V ^a   Ustinov, Victor M ^b   Kovsh, Alexey R ^c   Mikhrin, Sergey S ^c   Ledentsov, Nikolai N ^a,d   Lin, Gray ^e   Chi, Jim Y ^e  

^a IOFFE INSTITUTE   (Russian Federation)

^b RUSSIAN ACADEMY OF SCIENCES   (Russian Federation)

^c NL Nanosemiconductor GmbH   (Germany)

^d TECHNISCHE UNIVERSITÄT BERLIN   (Germany)

^e INDUSTRIAL TECHNOLOGY RESEARCH INSTITUTE   (Taiwan)

Author keywords

Distributed Bragg reflector (DBR); Internal optical losses; Quantum dot (QD); Single mode; Thermal resistance; Vertical cavity surface emitting laser (VCSEL)

Indexed keywords

FIBER BRAGG GRATINGS; HEAT RESISTANCE; MOLECULAR BEAM EPITAXY; MONOLAYERS; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS;

DISTRIBUTED BRAGG REFLECTOR (DBR); INTERNAL OPTICAL LOSSES; VERTICAL-CAVITY SURFACE-EMITTING LASER (VCSEL);

SEMICONDUCTOR LASERS;

EID: 33746494057     PISSN: 00189197     EISSN: None     Source Type: Journal    
DOI: 10.1109/JQE.2006.880125     Document Type: Article

References (29)

1. C. W. Wilmsen, H. Temkin, and L. A. Coldren, Vertical-Cavity Surface-Emitting Lasers. Cambridge, U.K.: Cambridge Univ. Press, 1999.
2. H. Saito, K. Nishi, I. Ogura, S. Sugou, and Y. Sugimoto, "Room-temperature lasing operation of a quantum-dot vertical-cavity surface-emitting laser," Appl. Phys. Lett., vol. 69, pp. 3140-3142, 1996.
3. Z. Zou, D. L. Huffaker, S. Csutak, and D. G. Deppe, "Ground state lasing from a quantum-dot oxide-confined vertical-cavity surface-emitting laser," Appl. Phys. Lett., vol. 75, pp. 22-24, 1999.
4. J. A. Lott, N. N. Ledentsov, V. M. Ustinov, N. A. Maleev, A. E. Zhukov, A. R. Kovsh, M. V. Maximov, B. V. Volovik, Z. I. Alferov, and D. Bimberg, "InAs-InGaAs quantum dot VCSELs on GaAs substrates emitting at 1.3 μm," Electron. Lett., vol. 36, pp. 1384-1385, 2000.
5. H. C. Yu, J. S. Wang, Y. K. Su, S. J. Chang, F. I. Lai, Y. H. Chang, H. C. Kuo, C. P. Sung, H. P. D. Yang, K. F. Lin, J. M. Wang, J. Y. Chi, R. S. Hsiao, and S. S. Mikhrin, "1.3 μm InAs-InGaAs quantum-dot vertical-cavity surface-emitting laser with fully doped DBRs grown by MBE," IEEE Photon. Technol. Lett., vol. 14, no. 2, pp. 418-420, Feb. 2006.
6. D. Ouyang, N. N. Ledentsov, R. L. Sellin, I. N. Kaiander, and D. Bimberg, "Impact of the mesa etching profiles on the spectral hole burning effects in quantum dot lasers," Semicond. Sci. Technol., vol. 18, pp. L53-L54, 2003.
7. V. M. Ustinov, A. E. Zhukov, A. Y. Egorov, and N. A. Maleev, Quantum Dot Lasers. Oxford, U.K.: Oxford Univ. Press, 2003.
8. M. V. Maximov and N. N. Ledentsov, "Quantum dot lasers," in Dekker Encyclopedia of Nanoscience and Nanotechnology, J. A. Schwarz, C. I. Contescu, and K. Putyera, Eds. New York: Dekker, 2004, pp. 3109-3126.
9. I. L. Krestnikov, N. N. Ledentsov, A. Hoffmann, and D. Bimberg, "Arrays of two-dimensional islands formed by submonolayer insertions: Growth, properties, devices," Phys. Stat. Sol. (a), vol. 183, pp. 207-233, 2001.
10. S. S. Mikhrin, A. R. Kovsh, A. E. Zhukov,D. A. Livshits, N. A. Maleev, A. P. Vasil'ev, Y. M. Shernyakov, M. V. Maximov, N. A. Pihtin, I. S. Tarasov, V. M. Ustinov, N. N. Ledentsov, D. Bimberg, and Z. I. Alferov, "0.94 μm diode lasers based on Stranski-Krastanow and submonolayer quantum dots," presented at the 26th Int. Conf. Phys. Semicond., Edinburgh, U.K., Jul. 2002, Paper L2.3.
11. Z. Xu, D. Birkedal, M. Juhl, and J. M. Hvam, "Sub-monolayer InGaAs/GaAs quantum-dot lasers with high modal gain and zero-linewidth enhancement factor," Appl. Phys. Lett., vol. 85, pp. 3259-3261, 2004.
12. R. L. Naone, E. R. Hegbloom, B. J. Thibeault, and L. A. Coldren, "Oxidation of AlGaAs layers for tapered apertures in vertical cavity lasers," Electron. Lett., vol. 33, pp. 300-301, 1997.
13. N. A. Maleev, A. P. Kovsh, A. E. Zhukov, A. P. Vasil'ev, S. S. Mikhrin, A. G. Kuz'menkov, D. A. Bedarev, Y. M. Zadiranov, M. M. Kulagina, Y. M. Shernyakov, A. S. Shulenkov, V. A. Bykovskii, Y. M. Solov'ev, C. Möller, N. N. Ledentsov, and V. M. Ustinov, "Design and technology of vertical-cavity surface-emitting lasers with nonconducting epitaxial mirrors," Semiconductors, vol. 37, pp. 1234-1238, 2003.
14. M. Creusen, F. de Btyun, F. Karouta, W. C. van der Vleuten, T. G. van de Roer, E. Smalbrugge, and B. H. van Roy, "Sealing method of dry-etched AlAs/GaAs top mirrors in vertical cavity surface emitting lasers," Electrochem. Solid-State Lett., vol. 2, pp. 83-85, 1999.
15. y structures," Semiconductors, vol. 39, no. 11, pp. 748-753, Nov. 2005.
16. G. M. Yang, M. H. MacDugal, V. Pudikov, and P. D. Dapkus, "Influence of mirror reflectivity on laser performance of very-low-threshold vertical-cavity surface-emitting lasers," IEEE Photon. Technol. Lett., vol. 7, pp. 1228-1230, 1995.
17. T. Makino, J. D. Evans, and G. Mak, "Maximum output power and maximum operating temperature of quantum well lasers," Appl. Phys. Lett., vol. 71, pp. 2871-2873, 1997.
18. M. Born and E. Wolf, Principles of Optics. New York: Pergamon, 1984.
19. E. R. Hegblom, D. I. Babic, B. J. Thibeault, and L. A. Coldren, "Estimation of scattering losses in dielectrically apertured vertical cavity lasers," Appl. Phys. Lett., vol. 68, pp. 1757-1759, 1996.
20. G. R. Hadley, "Effective index model for vertical-cavity surface-emitting lasers," Opt. Lett., vol. 20, pp. 1483-1485, 1995.
21. M. Jungo, F. M. di Sopra, D. Erni, and W. Baechtold, "Scaling effects on vertical-cavity surface-emitting lasers static and dynamic behavior," J. Appl. Phys., vol. 91, pp. 5550-5557, 2002.
22. M. Osinski and W. Nakwaski, "Thermal effects in vertical-cavity surface-emitting lasers," Int. J. High Speed Electron. Syst., vol. 5, pp. 667-730, 1994.
23. W. Nakwaski and M. Osinski, "Thermal resistance of top-surface-emitting vertical-cavity semiconductor lasers and monolithic two-dimensional arrays," Electron. Lett., vol. 28, pp. 572-574, 1992.
24. P. G. Newman, J. Pamulapati, H. Shen, M. Taysing-Lara, J. Liu, W. Chang, G. Simonis, B. Koley, M. Dagenais, S. Feld, and J. Loehr, "Molecular beam epitaxial growth of vertical cavity surface emitting lasers with digital alloys and digital gradings," J. Vac. Sci. Technol. B, vol. 18, pp. 1619-1622, 2000.
25. G. P. Agrawal, Fiber-Optic Communication Systems. New York: Wiley, 1997.
26. K. D. Choquette, K. M. Geib, C. I. H. Ashby, R. D. Twesten, O. Blum, H. Q. Hou, D. M. Follstaedt, B. E. Hammons, D. Mathes, and R. Hull, "Advances in selective wet oxidation of AlGaAs alloys," IEEE J. Sel. Topics Quantum Electron., vol. 3, no. 3, p. 916, Jun. 1997.
27. A. Bond, P. D. Dapkus, and J. D. O'Brien, "Aperture placement effects in oxide-defined vertical-cavity surface-emitting lasers," IEEE Photon. Technol. Lett., vol. 10, no. 10, pp. 1362-1364, Oct. 1998.
28. Y. G. Ju, "Evaluation scheme for the design of power optimized single mode vertical-cavity surface emitting lasers," Opt. Exp., vol. 12, pp. 2542-2547, 2004.
29. J. W. Scott, R. S. Geels, S. W. Corzine, and L. A. Coldren, "Modeling temperature effects and spatial hole burning to optimize vertical-cavity surface-emitting laser performance," IEEE J. Quantum Electron., vol. 29, no. 5, pp. 1295-1308, May 1993.