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Journal of Alloys and Compounds

Volumn 421, Issue 1-2, 2006, Pages 240-246

Dielectric relaxation property and barrier layer formation in CrNbO4 oxides

(5) Hsiao, Yu Jen a Chang, Yen Hwei a Fang, Te Hua b Chang, Yee Shin c Chai, Yin Lai d

a NATIONAL CHENG KUNG UNIVERSITY (Taiwan)

b NATIONAL FORMOSA UNIVERSITY (Taiwan)

c UNITED MICROELECTRONICS CORPORATION (Taiwan)

d DAHAN INSTITUTE OF TECHNOLOGY (Taiwan)

Author keywords

Dielectric; Relaxation; Rutile type; Solid state reaction

Indexed keywords

ACTIVATION ENERGY; CERAMIC MATERIALS; CRYSTAL STRUCTURE; DIELECTRIC RELAXATION; GRAIN BOUNDARIES; OXIDES; POLARIZATION;

CRNBO4 CERAMICS; RELAXATION; RUTILE TYPE; SOLID-STATE REACTION;

CHROMIUM COMPOUNDS;

EID: 33746455120 PISSN: 09258388 EISSN: None Source Type: Journal
DOI: 10.1016/j.jallcom.2005.11.024 Document Type: Article

Times cited : (25)

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