Low-frequency noise in AlGaN/GaN HEMT structures with AlN thin film layer

Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 3, Issue , 2006, Pages 2329-2332

  Vitusevich, S A ^a   Antoniuk, O A ^a   Petrychuk, M V ^b   Danylyuk, S V ^a   Kurakin, A M ^a   Belyaev, A E ^c   Klein, N ^a  

^a FORSCHUNGSZENTRUM JÜLICH   (Germany)

^b TARAS SHEVCHENKO NATIONAL UNIVERSITY OF KYIV   (Ukraine)

^c INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

Author keywords

[No Author keywords available]

Indexed keywords

CONDUCTING CHANNEL; GENERATION-RECOMBINATION; LOW-FREQUENCY NOISE; MOLAR FRACTION; 72.70.+M; 73.61.EY; 85.30.TV; ALGAN/GAN HIGH ELECTRON MOBILITY TRANSISTORS; CONDUCTING CHANNELS; POLARIZATION EFFECT; TRANSMISSION LINE MODELS;

CRYSTAL STRUCTURE; GALLIUM NITRIDE; HETEROJUNCTIONS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; POLARIZATION; SEMICONDUCTING ALUMINUM COMPOUNDS; MODEL STRUCTURES; TRANSMISSION LINE THEORY;

ACOUSTIC NOISE; HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33746337917     PISSN: 18626351     EISSN: None     Source Type: Journal    
DOI: 10.1002/pssc.200565138     Document Type: Conference Paper

References (3)

1. S. A. Vitusevich, S. V. Danylyuk, N. Klein, M. V. Petrychuk, and A. E. Belyaev, J. Appl. Phys. 96, 5625 (2004).
2. A. Van der Ziel, Noise in Solid State Devices and Circuits (John Wiley & Sons Publ., New York, 1986), pp. 120-145.
3. N. B. Lukyanchikova, Noise Research in Semiconductor Physics, edited by B. K. Jones (Gordon & Breach Science Publ., 1996), p. 411.