Characteristics of poly(vinyl acetate) as a gate insulating material in organic thin film transistors

Synthetic Metals

Volumn 156, Issue 11-13, 2006, Pages 861-864

  Sung, J H ^a   Park, S J ^a   Park, J H ^b   Choi, H J ^a   Choi, J S ^b  

^a Inha University   (South Korea)

^b Hong Ik University   (South Korea)

Author keywords

Dielectric constant; Organic thin film transistor; OTFT; Poly(vinyl acetate)

Indexed keywords

ELECTRIC INSULATING MATERIALS; GATES (TRANSISTOR); PERMITTIVITY; SPIN COATING; SURFACES; THIN FILM TRANSISTORS;

ORGANIC GATE-INSULATOR; ORGANIC THIN FILM TRANSISTOR; OTFT; POLY(VINYL ACETATE);

POLYVINYL ACETATES;

EID: 33746307506     PISSN: 03796779     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.synthmet.2006.05.009     Document Type: Article

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