Investigation of spin voltaic effect in a p-n heterojunction

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 45, Issue 24-28, 2006, Pages

  Kondo, Tsuyoshi ^a   Hayafuji, Jun Ji ^a   Munekata, Hiro ^a  

^a TOKYO INSTITUTE OF TECHNOLOGY   (Japan)

Author keywords

G factor; Heterostructure; III V semiconductors; Photodiode; Spin voltaic effect; Spintronics

Indexed keywords

LIGHT POLARIZATION; PHOTOCURRENTS; PHOTODIODES; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR MATERIALS;

G-FACTOR; III-V SEMICONDUCTORS; SPIN VOLTAIC EFFECT; SPINTRONICS;

HETEROJUNCTIONS;

EID: 33746306186     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.L663     Document Type: Article

References (13)

1. I. Žutić, J. Fabian and S. Das Sarma: Phys. Rev. Lett. 88 (2002) 066603.
2. J. Fabian, I. Žutić and S. Das Sarma; Phys. Rev. B 66 (2002) 165301.
3. A. A. Grinberg and S. Luryi: IEEE Trans. Electron Devices 40 (1993) 859.
4. S. M. Sze: Physics of Semiconductor Devices (John Wiley & Sons, New York, 1981) 2nd ed., Chap. 14.
5. M. T. Dyakonov and V. I. Perel: Optical Orientation, ed. F. Meier and B. P. Zakharchenya (North-Holland, Amsterdam, 1984) Chap. 2.
6. J. Hayafuji, T. Kondo and H. Munekata: IOP Conf. Proc. Ser. 184 (2005) 127.
7. C. Weisbuch and C. Hermann: Phys. Rev. B 15 (1977) 816.
8. H. Kosaka, A. A. Kiselev, F. A. Baron, K. W. Kim and E. Yablonovitch: Electron. Lett. 37 (2001) 464.
9. R. A. Smith: Semiconductors (Cambridge University Press, London, 1978) 2nd ed., Chap. 10.
10. Ch. Neumann, A. Nöthe and N. O. Lipari: Phys. Rev. B 37 (1988) 922.
11. E. H. Stevens and S. S. Yee: J. Appl. Phys. 44 (1973) 715.
12. W. Walukiewicz, J. Lagowski, L. Jastrzebski and H. C. Gatos: J. Appl. Phys. 50 (1979) 5040.
13. D. J. Wolford, G. D. Gilliland, T. F. Kuech, L. M. Smith, J. Martinsen, J. A. Bradley, C. F. Tsang, R. Venkatasubramanian, S. K. Ghandi and H. P. Hjaimarson: J. Vac. Sci. Technol. B 9 (1991) 2369.