Thermal behavior and phase transition in PZT near the morphotropic phase boundary

Ferroelectrics

Volumn 266, Issue , 2002, Pages 475-487

  Yamazaki, T ^a   Onodera, A ^a   Fujishita, H ^b   Ishikawa, Y ^b   Tanaka, M ^c  

^a HOKKAIDO UNIVERSITY   (Japan)

^b KANAZAWA UNIVERSITY   (Japan)

^c Sony Corporation Semiconductor Network Company   (Japan)

Author keywords

Antiferroelectric; Ferroelectric; Perovskite; Phase Transition; PZT; Specific Heat

Indexed keywords

ANTIFERROELECTRICITY; CALORIMETRY; CERAMIC MATERIALS; FERROELECTRIC MATERIALS; PHASE TRANSITIONS; SINGLE CRYSTALS; SPECIFIC HEAT;

ANTIFERROELECTRIC; MONOCLINIC PHASE; MORPHOTROPIC PHASE BOUNDARY (MPB); PZT;

LEAD COMPOUNDS;

EID: 33746265874     PISSN: 00150193     EISSN: 15635112     Source Type: Conference Proceeding    
DOI: 10.1080/00150190211324     Document Type: Article

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