Pitch and CD Measurements at Anisotropically Etched Si Structures in an SEM

Nanoscale Calibration Standards and Methods: Dimensional and Related Measurements in the Micro- and Nanometer Range

Volumn , Issue , 2006, Pages 375-384

  Frase, C G ^a   Czerkas, S ^a   Bosse, H ^a   Novikov, Yu A ^b   Rakov, A V ^b  

^a PHYSIKALISCH TECHNISCHE BUNDESANSTALT   (Germany)

^b National Metrology Institute ^*

Author keywords

Anisotropically etched Si structures; Application; GWPS specimen; Instrumentation; Lateral structures; Nanoscale calibration standards; Pitch and CD measurements; SEM image formation and modeling; SEM instrumentation; SEM measurement method

Indexed keywords

EID: 33746077323     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1002/3527606661.ch28     Document Type: Chapter

References (4)

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2. L. Reimer, in Scanning Electron Microscopy, Springer Series in Optical Science (Springer, Berlin, 1998), 2nd ed., Vol. 45.
3. W. Mirandé and C. G. Frase, Comparison of linewidth measurements on Si structures performed by atomic force microscopy (AFM) and low voltage scanning electron microscopy (SEM), in Proceedings Quantitative Microscopy (QM '99), Kopenhagen, 1999, PTB-Bericht PTB-F-34, 1999, pp. 89-89.
4. L. Reimer, M. Kässens, and L. Wiese, Monte Carlo program with free configuration of specimen geometry and detector signals, Microchim. Acta 13, 485-492 (1996).