Analysis and synthesis of pHEMT Class-E amplifiers with shunt inductor including ON-state active-device resistance effects

IEEE Transactions on Circuits and Systems I: Regular Papers

Volumn 53, Issue 7, 2006, Pages 1556-1564

  Mury, Thian ^a   Fusco, Vincent F ^a  

^a QUEEN'S UNIVERSITY BELFAST   (United Kingdom)

Author keywords

Class E; High efficiency; ON channel resistance; Pseudomorphic high electron mobility transistor (pHEMT); RF microwave amplifiers

Indexed keywords

COMPUTER SIMULATION; ELECTRIC NETWORK TOPOLOGY; MICROWAVE CIRCUITS; MONOLITHIC INTEGRATED CIRCUITS; POWER AMPLIFIERS; SWITCHING CIRCUITS;

ON-STATE ACTIVE-DEVICE RESISTNACE; OPTIMAL CIRCUIT COMPONENT; PSEUDOMORPHIC HIGH ELECTRON MOBILITY TRANSISTOR; SHUNT INDUCTOR TOPOLOGY;

HIGH ELECTRON MOBILITY TRANSISTORS;

EID: 33746043337     PISSN: 10577122     EISSN: None     Source Type: Journal    
DOI: 10.1109/TCSI.2006.876416     Document Type: Article

References (11)

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