Growth of ferroelectric BLT and Pt nanotubes for semiconductor memories

Journal of Crystal Growth

Volumn 292, Issue 2, 2006, Pages 315-319

  Seo, B I ^a,b   Shaislamov, U A ^a,b   Lee, S J ^a,b   Kim, Sang Woo ^a,b   Kim, I S ^a,b   Hong, S K ^b   Yang, Beelyong ^a  

^a Kumoh National Institute of Technology   (South Korea)

^b Hynix Semiconductor Inc   (South Korea)

Author keywords

A1. Anodization; B1. Blt; B1. Nanotube; B1. Porous alumina; B1. Pt; B2. Ferroelectric

Indexed keywords

ALUMINA; CAPACITORS; CRYSTALLIZATION; INTEGRATED CIRCUITS; NANOTUBES; NUCLEATION; PLATINUM; RAPID THERMAL ANNEALING; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR GROWTH; SEMICONDUCTOR MATERIALS; X RAY DIFFRACTION;

ANODIZATION; BLT; POROUS ALUMINA;

FERROELECTRIC MATERIALS;

EID: 33746001477     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.04.078     Document Type: Article

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