Observation of the interfacial layer in HfO2(10 nm)/Si by high-resolution RBS in combination with grazing angle sputtering

Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

Volumn 249, Issue 1-2 SPEC. ISS., 2006, Pages 238-241

  Sakai, W ^a   Nakajima, K ^a   Suzuki, M ^a   Kimura, K ^a   Brijs, B ^b  

^a KYOTO UNIVERSITY   (Japan)

^b IMEC   (Belgium)

Author keywords

Depth resolution; Grazing angle sputtering; HfO2; High resolution RBS

Indexed keywords

CHEMICAL VAPOR DEPOSITION; INTERFACIAL ENERGY; ION BEAMS; RUTHERFORD BACKSCATTERING SPECTROSCOPY; SILICON WAFERS;

DEPTH RESOLUTION; GRAZING ANGLE SPUTTERING; HFO2; HIGH-RESOLUTION RBS;

HAFNIUM COMPOUNDS;

EID: 33745969170     PISSN: 0168583X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nimb.2006.04.006     Document Type: Article

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