Effect of ZnTe buffer layer on the structural and optical properties of CdTe/ZnTe quantum dots

Journal of Crystal Growth

Volumn 293, Issue 1, 2006, Pages 27-31

  Lee, H S ^a   Park, H L ^a   Kim, T W ^b  

^a Yonsei University   (South Korea)

^b Hanyang University   (South Korea)

Author keywords

A1. Atomic force microscopy; A1. Nanostructures; A3. Atomic layer epitaxy; A3. Molecular beam epitaxy; B2. Semiconducting II VI materials

Indexed keywords

ATOMIC FORCE MICROSCOPY; ELECTRON TRANSITIONS; MOLECULAR BEAM EPITAXY; NANOSTRUCTURED MATERIALS; SELF ASSEMBLY; SEMICONDUCTOR QUANTUM DOTS;

ATOMIC LAYER EPITAXY; INTERBAND TRANSITIONS; NANOSTRUCTURES; SEMICONDUCTING II-VI MATERIALS;

ZINC COMPOUNDS;

EID: 33745962995     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.05.015     Document Type: Article

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