The catalytic nanodiode: Detecting continous electron flow at oxide-metal interfaces generated by a gas-phase exothermic reaction

ChemPhysChem

Volumn 7, Issue 7, 2006, Pages 1409-1413

  Jeong, Young Park ^a   Somorjai, Gabor A ^a  

^a UNIVERSITY OF CALIFORNIA   (United States)

Author keywords

Carbon monoxide; Catalysis; Electrochemistry; Hot electron flow; Metal semiconductor Schottky diode

Indexed keywords

CARBON MONOXIDE; CATALYSIS; CATALYTIC OXIDATION; ELECTROCHEMISTRY; ELECTRONS; GAS CHROMATOGRAPHY; METALS; PHASE INTERFACES; SCHOTTKY BARRIER DIODES; SEMICONDUCTOR DIODES; THERMOELECTRICITY;

CARBON MONOXIDE OXIDATION; CATALYTIC NANODIODES; ELECTRON FLOW; EXOTHERMIC CATALYTIC REACTIONS; EXOTHERMIC CHEMICAL REACTION; OXIDE-METAL INTERFACE; SCHOTTKY DIODES; THERMOELECTRIC CURRENTS;

HOT ELECTRONS;

EID: 33745956294     PISSN: 14394235     EISSN: 14397641     Source Type: Journal    
DOI: 10.1002/cphc.200600056     Document Type: Article

References (26)

1. T. Elsaesser, J. Shah, L. Rota, P. Lugli, Phys. Rev. Lett. 1991, 66, 1757.
2. J. R. Goldman, J. A. Prybyla, Phys. Rev. Lett. 1994, 72, 1364.
3. Y. H. Huang, C. T. Rettner, D. J. Auerbach, A. M. Wodtke, Science 2000, 290, 111.
4. L. Hellberg, J. Stromquist, B. Kasemo, B. I. Lundqvist, Phys. Rev. Lett. 1995, 74, 4742.
5. J. W. Gadzuk, J. Phys. Chem. B 2002, 106, 8265.
6. D. N. Denzler, C. Frischkorn, C. Hess, M. Wolf, G. Ertl, Phys. Rev. Lett. 2003, 91, 226 102.
7. B. R. Trenhaile, V. N. Antonov, G. J. Xu, K. S. Nakayama, J. H. Weaver, Surf. Sci. 2005, 583, L135.
8. A. Böttcher, R. Imbeck, A. Morgante, G. Ertl, Phys. Rev. Lett. 1990, 65, 2035.
9. H. Nienhaus, S. J. Weyers, B. Gergen, E. W. McFarland, Sens. Actuators, B 2002, 87, 421.
10. H. Nienhaus, H. S. Bergh, B. Gergen, A. Majumdar, W. H. Weinberg, E. W. McFarland, Phys. Rev. Lett. 1999, 82, 446.
11. H. Nienhaus, Surf. Sci. Rep. 2002, 45, 3.
12. J. R. Trail, M. C. Graham, D. M. Bird, M. Persson, S. Holloway, Phys. Rev. Lett. 2002, 88, 166 802.
13. M. S. Mizielinski, D. M. Bird, M. Persson, S. Holloway, J. Chem. Phys. 2005, 122, 084710.
14. X. Z. Ji, G. A. Somorjai, J. Phys. Chem. B 2005, 109, 22 530.
15. X. Z. Ji, A. Zuppero, J. M. Gidwani, G. A. Somorjai, Nano Lett. 2005, 5, 753.
16. X. Z. Ji, A. Zuppero, J. M. Gidwani, G. A. Somorjai, J. Am. Chem. Soc. 2005, 127, 5792.
17. G. A. Somorjai, Catal. Lett. 2005, 101, 1.
18. -3°C in the experimental range), we assumed that the system is in thermal equilibrium where the macroscopic temperature of the sample is defined and used for determination of the activation energy.
19. K. R. McCrea, J. S. Parker, G. A. Somorjai, J. Phys. Chem. B 2002, 106, 10 854.
20. S. M. Sze, Physics of Semiconductor Devices, Wiley, New York, 1981.
21. G.-M. Schwab, J. Phys. Chem. 1966, 50, 191;
22. G.-M. Schwab, Angew. Chem. 1967, 6, 375.
23. A. Boffa, C. Lin, A. T. Bell, G. A. Somorjai, J. Catal. 1994, 149, 149.
24. J. C. Frost, Nature 1988, 334, 577.
25. S. J. Tauster, S. C. Fung, R. L. Garten, J. Am. Chem. Soc. 1978, 100, 170.
26. D. Goodman, Catal. Lett. 2005, 99, 1.