Double-layer silicon PIN photodiode X-ray detector for a future X-ray timing mission

Nuclear Instruments and Methods in Physics Research, Section A: Accelerators, Spectrometers, Detectors and Associated Equipment

Volumn 564, Issue 1, 2006, Pages 347-351

  Feng, Hua ^a   Kaaret, Philip ^a   Andersson, Hans ^b  

^a UNIVERSITY OF IOWA   (United States)

^b Oxford Instruments Analytical Oy   (Finland)

Author keywords

PIN; Si; Timing; X ray

Indexed keywords

OPTICAL RESOLVING POWER; PHOTODETECTORS; PHOTODIODES; SENSORS; VACUUM; X RAY DIFFRACTION;

PIN; PIN PHOTODIODES; TIMING; X-RAY;

SILICON;

EID: 33745930809     PISSN: 01689002     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.nima.2006.05.013     Document Type: Article

References (4)

1. P. Kaaret, in: X-Ray Timing 2003: Rossi and Beyond, AIP Conference, vol. 714, 2004, p. 423.
2. Bradt H.V., Rothschild R.E., and Swank J.H. A&AS 97 (1993) 355
3. K. Mitsuda, H. Kunieda, H. Inoue, R. Kelley, in: Proceedings of the SPIE, vol. 5488, 2004, p. 177.
4. Iwanczyk J.S., and Patt B.E. Semiconductors for Room Temperature Nuclear Detector Applications: Electronics for X-ray and Gamma Ray Spectrometers (1995), Academic Press, New York