A 6.5kV IGBT module with very high Safe operating area

Conference Record - IAS Annual Meeting (IEEE Industry Applications Society)

Volumn 2, Issue , 2005, Pages 794-798

  Kopta, A ^a   Rahimo, M ^a   Schlapbach, U ^a   Schneider, D ^a   Carroll, Eric ^a   Linder, S ^a  

^a ABB SWITZERLAND LTD   (Switzerland)

Author keywords

IGET; Power module; Safe operating area

Indexed keywords

ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; GATES (TRANSISTOR); MICROPROCESSOR CHIPS; SWITCHING THEORY; VOLTAGE CONTROL;

CHIP TECHNOLOGY; GATE RESISTANCE; POWER MODULE; SAFE OPERATING AREA;

INSULATED GATE BIPOLAR TRANSISTORS;

EID: 33745884381     PISSN: 01972618     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IAS.2005.1518423     Document Type: Conference Paper

References (2)

1. M. Rahimo et al., "2.5kV-6.5kV Industry Standard IGBT Modules Setting a New Benchmark in SOA Capability" Proc. PCIM'2004, NURNBERG, GERMANY, 2004, pp 314-319.
2. M. Rahimo et al., "Switching-Self-Clamping-Mode "SSCM", a breakthrough in SOA performance for high voltage IGBTs and Diodes" Proc. ISPSD'2004, JAPAN, May 2004, pp 437-440.