Fully integrated ferrite-based inductors for RF ICs

Sensors and Actuators, A: Physical

Volumn 130-131, Issue SPEC. ISS., 2006, Pages 365-370

  Yang, C ^a   Liu, F ^a   Ren, T ^a   Liu, L ^a   Feng, H ^b   Wang, A Z ^b   Long, H ^a  

^a TSINGHUA UNIVERSITY   (China)

^b ILLINOIS INSTITUTE OF TECHNOLOGY   (United States)

Author keywords

Ferrite; Fully integration; Inductor; RF ICs

Indexed keywords

COBALT COMPOUNDS; FERRITES; INTEGRATION; MANGANESE COMPOUNDS; NATURAL FREQUENCIES; THIN FILMS;

FULLY INTEGRATION; HIGH-FREQUENCY PERFORMANCE; INDUCTORS; RF ICS;

ELECTRIC INDUCTORS;

EID: 33745823850     PISSN: 09244247     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sna.2005.10.024     Document Type: Article

References (22)

1. Burghartz J.N., Jenkins K.A., and Soyuer M. Multilevel-spiral inductors using VLSI interconnect technology. IEEE Electron Device Lett. 17 (1996) 428-430
2. Zolfaghari A., Chan A., and Razavi B. Stacked inductors and transformers in CMOS technology. IEEE J. Solid-State Circuits 36 (2001) 620-628
3. Nam C.M., and Kwon Y.S. High-performance planar inductor on thick oxidized porous silicon (OPS) substrate. IEEE Microwave Guided Wave Lett. 7 (1997) 236-238
4. Yue C.P., and Wong S.S. On-chip spiral inductors with patterned ground shields for Si-based RF IC's. IEEE J. Solid-State Circuits 33 (1998) 743-752
5. Yim S.M., Chen T., and Kenneth K.O. The effects of a ground shield on the characteristics and performance of spiral inductors. IEEE J. Solid-State Circuits 37 (2002) 237-244
6. X. Huo, K.J. Chen, P.C. Chan, High-Q copper inductors on standard silicon substrate with a low-k BCB dielectric layer, Tech. Digest, IEEE MTT-S, Seattle, Washington, USA, 2-7 June 2002, pp. 513-516.
7. Lakdawala H., Zhu X., Luo H., Santhanam S., Carley L.R., and Fedder G.K. Micromachined high-Q inductors in a 0.18-μm copper interconnect low-k dielectric CMOS process. IEEE J. Solid-State Circuits 37 (2002) 394-403
8. Yoon J.B., Choi Y.S., Kim B.I., Eo Y., and Yoon E. CMOS-compatible surface-micromachined suspended-spiral inductors for multi-GHz silicon RF ICs. IEEE Electron Device Lett. 23 (2002) 591-593
9. Jiang H., Wang Y., Yeh J.A., and Tien N.C. On-chip spiral inductors suspended over deep copper-lined cavities. IEEE Trans. Microwave Theory Tech. 48 (2000) 2415-2423
10. Liu Z., Ding Y., Liu L., and Li Z. Fabrication planar coil on oxide membrane hollowed with porous silicon as sacrificial layer. Sens. Actuators A 108 (2003) 112-116
11. Zou J., Liu C., Trainor D.R., Chen J., Schutt-Ainé J.E., and Chapman P.L. Development of three-dimensional inductors using plastic deformation magnetic assembly (PDMA). IEEE Trans. Microwave Theory Tech. 51 (2003) 1067-1075
12. Dahlmann G.W., Yeatman E.M., Young P., Robertson I.D., and Lucyszyn S. Fabrication, RF characteristics and mechanical stability of self-assembled 3D microwave inductors. Sens. Actuators A 97-98 (2002) 215-220
13. Yamaguchi M., Miyazawa Y., and Kaminishi K. Soft magnetic applications in the RF range. J. Magn. Magn. Mater. 268 (2004) 170-177
14. Korenivski V. GHz magnetic film inductors. J. Magn. Magn. Mater. 215-216 (2000) 800-806
15. Yamaguchi M., Baba M., and Arai K.-I. Sandwich-type ferromagnetic RF integrated inductor. IEEE Trans. Microwave Theory Tech. 49 (2001) 2331-2335
16. Roshen W.A., and Turcotte D.E. Planar inductors on magnetic substrates. IEEE Trans. Magn. 24 (1988) 3213-3216
17. Roshen W.A. Effect of finite thickness of magnetic substrate on planar inductors. IEEE Trans. Magn. 26 (1990) 270-275
18. Hurley W.G., and Duffy M.C. Calculation of self and mutual impedances in planar magnetic inductors. IEEE Trans. Magn. 31 (1995) 2416-2422
19. Hurley W.G., and Duffy M.C. Calculation of self- and mutual impedances in planar sandwich inductors. IEEE Trans. Magn. 33 (1997) 2282-2290
20. Hurley W.G., Duffy M.C., O'Reilly S., and Ó'Mathúna S.C. Impedance formulas for planar magnetic structures with spiral windings. IEEE Trans. Ind. Electron. 46 (1999) 271-278
21. C.P. Yue, C. Ryu, J. Lau, T.H. Lee, S.S. Wong, A physical model for planar spiral inductors on silicon, Tech. Digest, IEEE Int. Electron Devices Meet., Washington, DC, USA, 2-7 December 1996, pp. 155-158.
22. Long H., Feng Z., Feng H., Wang A.Z., Ren T., Bao J., Liu F., Yang C., and Zhang X. A new modeling technique for simulating 3D arbitrary conductor-magnet structures for RFIC applications. IEEE Trans. Electron Devices 52 (2005) 1354-1363