Impact of interface relaxation on the nanoscale corrugation in Pb/Si(1 1 1) islands

Surface Science

Volumn 600, Issue 14, 2006, Pages 179-183

  Chan, T L ^a   Wang, C Z ^a   Hupalo, M ^a   Tringides, M C ^a   Lu, W C ^a   Ho, K M ^a  

^a IOWA STATE UNIVERSITY   (United States)

Author keywords

Lead; Low index single crystal surfaces; Metal semiconductor interfaces; Molecular dynamics; Scanning tunneling microscopy; Self assembly; Silicon; Surface relaxation and reconstruction

Indexed keywords

INTERFACES (MATERIALS); LEAD; MOLECULAR DYNAMICS; RELAXATION PROCESSES; SCANNING TUNNELING MICROSCOPY; SELF ASSEMBLY; SILICON; THICKNESS CONTROL;

LOW INDEX SINGLE CRYSTAL SURFACES; METAL-SEMICONDUCTOR INTERFACES; STM IMAGES; SURFACE RELAXATION AND RECONSTRUCTION;

NANOSTRUCTURED MATERIALS;

EID: 33745820317     PISSN: 00396028     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.susc.2006.05.014     Document Type: Article

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