Hole-trapping in ATiO3, (A = Ba, Sr, Ca)

Ferroelectrics

Volumn 331, Issue , 2006, Pages 43-51

  Ma, Fengxia ^a   Raymond, Mark V ^b   Smyth, Donald M ^a  

^a LEHIGH UNIVERSITY   (United States)

^b MOTOROLA INC   (United States)

Author keywords

Conductivity; Defects; Hole traps; Perovskites

Indexed keywords

DEFECTS; ELECTRIC CONDUCTIVITY; ENTHALPY; OXIDATION; PEROVSKITE; REACTION KINETICS; SEMICONDUCTOR DOPING;

ACCEPTOR HOLE TRAPS; CONDUCTIVITY; EQUILIBRIUM CONDUCTIVITY; TRAPPED HOLES;

HOLE TRAPS;

EID: 33745809198     PISSN: 00150193     EISSN: 15635112     Source Type: Conference Proceeding    
DOI: 10.1080/00150190600732942     Document Type: Article

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