Different behaviors of F+ centers due to electron beam irradiations between synthetic sapphire and Be-diffusion-treated natural sapphire

Journal of Crystal Growth

Volumn 292, Issue 2, 2006, Pages 546-549

  Lee, Bo Hyun ^a   Teraji, Tokuyuki ^a   Ito, Toshimichi ^a  

^a OSAKA UNIVERSITY   (Japan)

Author keywords

A1. Chracterization; A1. Crystallinity; A1. Luminescence; A1. Point defects; B1. Sapphire; B2. Semiconducting materials

Indexed keywords

CATHODOLUMINESCENCE; CHARACTERIZATION; DIFFUSION; ELECTRON BEAMS; PHOTOLUMINESCENCE; POINT DEFECTS; SAPPHIRE; SEMICONDUCTOR MATERIALS;

CRYSTALLINITY; SYNTHETIC SAPPHIRE; TEMPERATURE DEPENDENCE; TIME-RESOLVED PHOTOLUMINESCENCE;

FLUORINE;

EID: 33745805516     PISSN: 00220248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jcrysgro.2006.04.062     Document Type: Article

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