Ab initio characterization of the electronic and optical properties of a new IR nonlinear optical crystal: K3V5O14

Journal of Physics Condensed Matter

Volumn 18, Issue 23, 2006, Pages 5535-5544

  Huang, S P ^a   Wu, D S ^a   Shen, J ^a   Cheng, W D ^a   Lan, Y Z ^a   Li, F F ^a   Zhang, H ^a   Gong, Y J ^a  

^a FUJIAN INSTITUTE OF RESEARCH ON THE STRUCTURE OF MATTER   (China)

Author keywords

[No Author keywords available]

Indexed keywords

BAND STRUCTURE; BIREFRINGENCE; CARRIER CONCENTRATION; CRYSTALS; ELECTRONIC PROPERTIES; ENERGY GAP; NONLINEAR OPTICS; OPTICAL PROPERTIES; PROBABILITY DENSITY FUNCTION; REFRACTIVE INDEX; SECOND HARMONIC GENERATION;

DENSITY OF STATES (DOS); DIELECTRIC FUNCTION; INDIRECT BAND GAP SEMICONDUCTOR; NONLINEAR OPTICAL CRYSTAL; POPULATION ANALYSIS; SECOND-ORDER NONLINEAR SUSCEPTIBILITIES;

POTASSIUM COMPOUNDS;

EID: 33745783134     PISSN: 09538984     EISSN: 1361648X     Source Type: Journal    
DOI: 10.1088/0953-8984/18/23/023     Document Type: Article

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