High-index fluoride materials for 193 nm immersion lithography

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6154 I, Issue , 2006, Pages

  Nawata, T ^a   Inui, Y ^a   Masada, I ^a   Nishijima, E ^a   Satoh, H ^b   Fukuda, T ^b  

^a TOKUYAMA CORPORATION   (Japan)

^b TOHOKU UNIVERSITY   (Japan)

Author keywords

BaF2; BaLiF3; Czochralski; High index; Immersion lithography; KY3F10; Single crystal

Indexed keywords

BARIUM COMPOUNDS; BIREFRINGENCE; CRYSTAL GROWTH; CRYSTAL SYMMETRY; LITHOGRAPHY; REFRACTIVE INDEX; SILICA; YTTRIUM COMPOUNDS;

BAF2; BALIF3; CZOCHRALSKI; HIGH INDEX; IMMERSION LITHOGRAPHY; KY3F10;

FLUORIDE MINERALS;

EID: 33745779657     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.657247     Document Type: Conference Paper

References (6)

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2. 2 Possibility", Company News, 29th November, 2004
3. J. H. Burnett et al "High-index materials for 193-nm and 157-nm immersion lithography", SPIE OPTICAL MICROLITHOGRAPHY XVIII, San Jose, USA. 27-4th March, 2005
4. K.kamada, T.Nawata et al.Nucl. Instr. and Meth. A 537, (2005) 159
5. A.Yoshikawa, K.Kamada et al.,J. Crystal Growth 285 (2005) 445
6. A.I.Agulyanski et al.,Russ. J. Inorg. Chem. 27[4] (1982) 579