Optical properties and process impacts of high transmission EAPSM

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6154 I, Issue , 2006, Pages

  Ham, Young Mog ^a   Morgana, Nicolo ^a   Sixt, Pierre ^a   Cangemi, Mike ^a   Kasprowicz, Bryan ^a   Progler, Chris ^a   Martin, Pat ^a  

^a PHOTRONICS INC   (United States)

Author keywords

ArF; Design; EAPSM; High transmission; Manufacturability; OPC; Process margin; RET; Simulation

Indexed keywords

ARF; EAPSM; HIGH TRANSMISSION; MANUFACTURABILITY; OPC; PROCESS MARGIN; RET;

COMPUTER SIMULATION; MASKS; METALLIC FILMS; OPTICAL PROPERTIES; PROBLEM SOLVING; WSI CIRCUITS;

PHOTOLITHOGRAPHY;

EID: 33745777591     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.659238     Document Type: Conference Paper

References (5)

1. Young-Mog Ham, Sang-Sool Koo, Sang-Jin Kim, Won-Kwang Ma, and Ki-Su Shin, " Impact on wafer process of sub-120nm design rule mask", BACUS 2001
2. Sang-Jin Kim, S.S Koo, S.M Kim, C.N Ahn, Y. M. Ham and K.S Shin, The qualitative analysis of mask error effect on wafer CD variation in Arf lithography", PMJ 2001
3. Young-Mog Ham, Seo-Min Kim, Sang-Jin Kim, Sang-Man Bae, Young-Deuk Kim, and Ki-Ho Baik, "Sub-120nm technology compatibility of attenuated phase shift mask in ArF and ArF lithography", BACUS 2000
4. Seo-Min Kim, Sang-Jin Kim, Chang-Jin Bang, Young-Mog Ham, and Bong-Ho Kim, " Sub-120nm Pattering in KrF Lithography, Jpn. J. Appl. Phys. Vol. 37 (2001)
5. Young M Ham, " Why EAPSM ?", vol. 1, issue 4, Technology review, 2003