Influence of thickness and Zr content on Ba(Tix Zr 1-x)O3 thin films

Ferroelectrics

Volumn 332, Issue , 2006, Pages 153-157

  Hofer, C ^a   Halder, S ^a   Waser, R ^a,b  

^a RWTH AACHEN UNIVERSITY   (Germany)

^b FORSCHUNGSZENTRUM JÜLICH   (Germany)

Author keywords

Activation energy; BaTiO3; Curie temperature; Dielectric properties; Interface capacitance

Indexed keywords

BARIUM COMPOUNDS; DEPOSITION; FERROELECTRIC CERAMICS; INTERFACES (MATERIALS); PERMITTIVITY; ZIRCONIUM; ACTIVATION ENERGY; CAPACITANCE; CURIE TEMPERATURE; DIELECTRIC PROPERTIES; FERROELECTRIC THIN FILMS; FILM THICKNESS; MANGANESE;

BATIO3; CURIE TEMPERATURE; INTERFACE CAPACITANCE;

THIN FILMS;

BATIO; BST THIN FILMS; CHEMICAL SOLUTION DEPOSITION; COMPLEX IMPEDANCE MEASUREMENTS; FREQUENCY RANGES; INTERFACE CAPACITANCE; INTERFACE LAYER; MN-DOPED;

EID: 33745764021     PISSN: 00150193     EISSN: 15635112     Source Type: Conference Proceeding    
DOI: 10.1080/00150190500316465     Document Type: Article

References (5)

1. R. Waser, Integrated Ferroelectrics 15, 39 (1996). and references therein
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3. K. Abe, Japanese Journal of Applied Physics 33, 5297 (1994).
4. C. Hofer, Journal of the European Ceramic Society, in press.
5. U. Ellerkmann, Ferroelectrics 271, 315 (2002).