Lead excess in Pb(Zr,Ti)O3 thin films deposited by reactive sputtering at low temperatures

Ferroelectrics

Volumn 318, Issue , 2005, Pages 3-10

  Suchaneck, G ^a   Deyneka, A ^b   Jastrabik, L ^b   Savinov, M ^b   Gerlach, G ^a  

^a DRESDEN UNIVERSITY OF TECHNOLOGY   (Germany)

^b INSTITUTE OF PHYSICS   (Czech Republic)

Author keywords

Antisite point defects; Dielectric properties; Ferroelectrics; Phase diagram; X ray photoelectron spectroscopy

Indexed keywords

DEPOSITION; DIELECTRIC PROPERTIES; LEAD COMPOUNDS; MAGNETRON SPUTTERING; PHASE DIAGRAMS; REACTION KINETICS; X RAY PHOTOELECTRON SPECTROSCOPY;

ANTISITE POINT DEFECTS; LEAD VALENCE; MAXWELL-WAGNER-TYPE RELAXOR; REACTIVE SPUTTERING;

FERROELECTRIC THIN FILMS;

EID: 33745750287     PISSN: 00150193     EISSN: 15635112     Source Type: Conference Proceeding    
DOI: 10.1080/00150190590965901     Document Type: Article

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