Electrical properties of layer structured Bi4 Ti3 O12 ferroelectrics with W6+ doping

Integrated Ferroelectrics

Volumn 79, Issue 1, 2006, Pages 253-263

  Zhang, L N ^a   Li, G R ^a   Zhao, S C ^a   Ding, A L ^a   Yin, Q R ^a  

^a SHANGHAI INSTITUTE OF CERAMICS   (China)

Author keywords

Bismuth layer structured ferroelectrics; Defect dipole; Ferroelectric properties; Impedance; Resistivity

Indexed keywords

CERAMIC MATERIALS; ELECTRIC CONDUCTIVITY; ELECTRIC PROPERTIES; FERROELECTRIC MATERIALS; GRAIN BOUNDARIES; NETWORKS (CIRCUITS); POLARIZATION; SEMICONDUCTOR DOPING;

BISMUTH LAYER-STRUCTURED FERROELECTRICS; DEFECT DIPOLE; DIRECT CURRENT CIRCUIT; OXYGEN VACANCIES;

TERNARY SYSTEMS;

EID: 33745750175     PISSN: 10584587     EISSN: 16078489     Source Type: Conference Proceeding    
DOI: 10.1080/10584580600659936     Document Type: Article

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