Effects of hydrogen dilution on deposition process of nano-crystalline silicon film by SiCl4/H2 plasma

Journal of Physics D: Applied Physics

Volumn 39, Issue 14, 2006, Pages 3030-3035

  Wang, Zhaokui ^a   Lou, Yanhui ^a   Lin, Kuixun ^b   Lin, Xuanying ^b   Huang, Rui ^b   Wei, Junhong ^b  

^a HENAN NORMAL UNIVERSITY   (China)

^b SHANTOU UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER CONCENTRATION; CHEMICAL VAPOR DEPOSITION; FILM GROWTH; HYDROGEN; LANGMUIR BLODGETT FILMS; MASS SPECTROMETRY; NANOSTRUCTURED MATERIALS; PLASMAS; RAMAN SCATTERING; SURFACE REACTIONS; THIN FILMS;

DANGLING; DILUTION; ELECTRON ENERGY; EXOTHERMIC ENERGY; FILM QUALITY; LANGMUIR PROBE;

SILICON;

EID: 33745685399     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/39/14/023     Document Type: Article

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