A fully integrated SOI RF MEMS technology for system-on-a-chip applications

IEEE Transactions on Electron Devices

Volumn 53, Issue 1, 2006, Pages 167-172

  Guan, Lingpeng ^a,b   Sin, Johnny K O ^a,b   Liu, Haitao ^a,c   Xiong, Zhibin ^a,d  

^a IEEE   (Hong Kong)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

^c MICRON TECHNOLOGY INC   (United States)

^d Chartered Semiconductor Manufacturing   (Singapore)

Author keywords

CMOS; High voltage device; Radio frequency (RF) microelectromechanical systems (MEMS) capacitive switch; Silicon on insulator (SOI); System on a chip

Indexed keywords

HIGH-VOLTAGE DEVICE; RADIO-FREQUENCY (RF) MICROELECTROMECHANICAL SYSTEMS (MEMS) CAPACITIVE SWITCH; SYSTEM-ON-A-CHIP;

ELECTRIC CONDUCTIVITY; INTEGRATED CIRCUIT LAYOUT; MICROPROCESSOR CHIPS; NETWORKS (CIRCUITS); SILICON ON INSULATOR TECHNOLOGY; THRESHOLD VOLTAGE;

MEMS;

EID: 33745647761     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2005.860638     Document Type: Article

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