Fast interface characterization of tunnel oxide MOS structures

IEEE Transactions on Nanotechnology

Volumn 1, Issue 2, 2002, Pages 110-113

  Sell, Bernhard ^a,b,d   Schumann, Dirk ^a,b,e   Krautschneider, Wolfgang H ^a,c  

^a IEEE   (United States)

^b INFINEON TECHNOLOGIES AG   (Germany)

^c HAMBURG UNIVERSITY OF TECHNOLOGY   (Germany)

^d INTEL CORPORATION   (United States)

^e U2T PHOTONICS AG   (Germany)

Author keywords

Capacitance measurements; Flatband potential; Oxide thickness; Quantum mechanical corrections

Indexed keywords

CAPACITANCE MEASUREMENTS; FLATBAND POTENTIAL; OXIDE THICKNESS; QUANTUM MECHANICAL CORRECTIONS;

FERMI LEVEL; GATES (TRANSISTOR); INTERFACES (MATERIALS); MOS DEVICES; STATISTICAL METHODS;

QUANTUM THEORY;

EID: 33745631510     PISSN: 1536125X     EISSN: None     Source Type: Journal    
DOI: 10.1109/TNANO.2002.804747     Document Type: Article

References (7)

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7. B. Sell, "Interface characterization of metal-gate MOS-structures and the application to DRAM-capacitors," Ph.D. dissertation, Tech. Univ. Hamburg-Marburg, Hamburg, Germany, 2002.