A new quantum dot formation process using wet etching of poly-Si along grain boundaries

Digest of Papers - 2000 International Microprocesses and Nanotechnology Conference, MNC 2000

Volumn , Issue , 2000, Pages 248-249

  Yoo, Seong Jong ^a   Lee, Jongho ^b   Shin, Hyungcheol ^a  

^a Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^b Wonkwang University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

GRAIN BOUNDARIES; NANOCRYSTALS; NANOTECHNOLOGY; OPTIMIZATION; POLYCRYSTALLINE MATERIALS; SEMICONDUCTOR QUANTUM DOTS; SILICON;

AMORPHOUS SI; DOT FORMATIONS; ELECTRICAL CHARACTERISTIC;

AMORPHOUS SILICON;

EID: 33745629662     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMNC.2000.872738     Document Type: Conference Paper

References (3)

1. Ilgweon Kim, et al, IEEE Electron Device Utters, Vol. 20, No. 12, pp. 630-631, 1999
2. Hussein I. Hanafi, et al, IEEE Trans, on Electron Devices, Vol. 43, No. 9, pp. 1553-1558, 1996
3. Anri Nakajima, et al, Japan J. Appl. Phys., Vol. 33, No. 12 B, pp. L1796-1798, 1994