Novel Si nanocrystal formation technique as applied to fabrication of Si nanostructure

1999 International Microprocesses and Nanotechnology Conference

Volumn , Issue , 1999, Pages 118-119

  Takeguchi, Masaki ^a   Furuya, Kazuo ^a   Yoshihara, Kazuhiro ^a  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON BEAMS; ELECTRONS; FABRICATION; IRRADIATION; NANOSTRUCTURES; NANOTECHNOLOGY; NONVOLATILE STORAGE; OPTICAL PROPERTIES; SILICA; SILICON; SINGLE CRYSTALS; THIN FILMS;

ACCELERATION VOLTAGES; HIGH TEMPERATURE; HIGH-INTENSITY ELECTRON BEAM; IRRADIATED AREA; LOW DIMENSIONAL; MATERIAL SCIENCE; SI NANOSTRUCTURES; SIO2 THIN FILMS;

NANOCRYSTALS;

EID: 33745622472     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMNC.1999.797505     Document Type: Conference Paper

References (0)