Effect of charged-particle bombardment on collector mirror reflectivity in EUV lithography devices

Proceedings of SPIE - The International Society for Optical Engineering

Volumn 6151 II, Issue , 2006, Pages

  Allain, J P ^a   Nieto, M ^a   Hassanein, A ^a   Titov, V ^a   Plotkin, P ^a   Hendricks, M ^a   Hinson, E ^b   Chrobak, C ^c   Van Der Velden, M H L ^d   Rice, B ^e  

^a ARGONNE NATIONAL LABORATORY   (United States)

^b MIDDLEBURY COLLEGE   (United States)

^c UNIVERSITY OF WISCONSIN MADISON   (United States)

^d EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^e INTEL CORPORATION   (United States)

Author keywords

EUV collector optics; EUV reflectivity; Ion scattering spectroscopy; Sn deposition; Sn implantation; Threshold sputtering

Indexed keywords

EUV COLLECTOR OPTICS; EUV REFLECTIVITY; ION SCATTERING SPECTROSCOPY; SN DEPOSITION; SN IMPLANTATION; THRESHOLD SPUTTERING;

LIGHT REFLECTION; LITHOGRAPHY; MIRRORS; PLASMAS; THIN FILMS; ULTRAVIOLET RADIATION;

CHARGE CARRIERS;

EID: 33745613233     PISSN: 0277786X     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1117/12.656652     Document Type: Conference Paper

References (0)