Formation of nickel silicide and germanosilicide layers on Si(001), relaxed SiGe/Si (001), and strained Si/relaxed SiGe/Si (001) and effect of postthermal annealing

Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films

Volumn 24, Issue 4, 2006, Pages 1468-1473

  Ko, J H ^c   Jang, C H ^c   Kim, S H ^a   Song, Y J ^a   Lee, N E ^b  

^a Electronics and Telecommunications Research Institute (ETRI)   (South Korea)

^b Sungkyunkwan University   (South Korea)

^c NONE

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRIC PROPERTIES; GRAIN GROWTH; HETEROJUNCTIONS; PHASE TRANSITIONS; RAPID THERMAL ANNEALING; SILICON;

AMORPHOUS INTERLAYER; GERMANOSILICIDE; NICKEL SILICIDE; SHEET RESISTANCE;

NICKEL COMPOUNDS;

EID: 33745511073     PISSN: 07342101     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.2210942     Document Type: Article

References (28)

1. K. Usuda, T. Numata, and S. Takagi, Mater. Sci. Semicond. Process. 8, 155 (2005).
2. K. L. Lee, F. Cardone, P. Saunders, P. Kozlowski, P. Ronsheim, H. Zhu, K. Chan, and M. Ieong, Tech. Dig. - Int. Electron Devices Meet. 2003, 481.
3. M. L. Lee, A. J. Pitera, and E. A. Fitzgerald, J. Vac. Sci. Technol. B 22, 158 (2004).
4. C. Yi Su, S. L. Wu, S. J. Chang, and L. P. Chen, Thin Solid Films 369, 371 (2000).
5. E. Duda, J. Vac. Sci. Technol. B 22, 327 (2004).
6. S. G. Badcock, A. G. O'Neill, and E. G. Chester, Solid-State Electron. 46, 1925 (2002).
7. V. Aubry-Fortuna, P. Dollfus, and S. Galdin-Retailleau, Solid-State Electron. 49, 1320 (2005).
8. L. H. Wong, Thin Solid Films 462-463, 76 (2004).
9. D.-L. Mei, J.-C. Li, J. Zhang, W.-J. Xu, K.-Z. Tan, and M.-H. Yang, Microelectron. J. 35, 969 (2004).
10. S.-G. Lee, Mater. Sci. Semicond. Process. 8, 215 (2005).
11. J. Weber, L. Nebrich, F. Bensch, K. Neumeier, G. Vogg, R. Wieland, D. Bonfert, and P. Ramm, Microelectron. Eng. 82, 215 (2005).
12. A. R. Saha, S. Chattopadhyay, and C. K. Maiti, Solid-State Electron. 48, 1391 (2004).
13. International Technology Roadmap for Semiconductors, Semiconductor Industry Association, San Jose, California, 2001, http://www.sia-online.org
14. J. P. Gambino and E. G. Colgan, Mater. Chem. Phys. 52, 99 (1998).
15. C. Lavoie, F. M. d'Heurle, C. Detavernier, and C. Cabral, Jr., Microelectron. Eng. 70, 144 (2003).
16. S.-L. Zhang, Microelectron. Eng. 70, 174 (2003).
17. M.-J. Kim, H.-J. Choi, D.-H. Ko, J.-H. Ku, S. Choi, K. Fujihara, and C.-W. Yang, J. Korean Phys. Soc. 40, 737 (2002).
18. F. F. Zhao, J. Z. Zheng, Z. X. Shen, T. Osipowicz, W. Z. Gao, and C. H. Chan, Microelectron. Eng. 71, 104 (2004).
19. M. Glück, Thin Solid Films 270, 549 (1995).
20. S. H. Ban, D. O. Shin, Y. S. Ahn, N.-E. Lee, B. T. Ahn, and K.-H. Shim, Jpn. J. Appl. Phys., Part 1 42, 3350 (2003).
21. D. O. Shin, Y. S. Ahn, S. H. Ban, N.-E. Lee, B. T. Ahn, H. S. Shim, K.-H. Shim, and J.-Y. Kang, Mater. Sci. Eng., B 89, 279 (2002).
22. C. K. Maiti, S. K. Samanta, S. Chatterjee, G. K. Dalapati, and L. K. Bera, Solid-State Electron. 48, 1369 (2004).
23. C. H. Jang, D. O. Shin, S. I. Baik, Y.-W. Kim, Y. J. Song, K.-H. Shim, and N.-E. Lee, Jpn. J. Appl. Phys., Part 1 44, 4805 (2005).
24. C. Lavoie, F. M. d'Heurle, C. Detavernier, and C. Cabral, Jr., Microelectron. Eng. 70, 144 (2003).
25. J. Seger, S.-L. Zhang, D. Mangelinck, and H. H. Radamson, Appl. Phys. Lett. 81, 1978 (2002).
26. D. K. Sarkar, M. Felke, H. Griesler, S. Teichert, G. Beddies, and H.-J. Hinneberg, Appl. Phys. A: Mater. Sci. Process. 70, 681 (2006).
27. L. A. Clevenger and C. V. Thomson, J. Appl. Phys. 67, 1325 (1990).
28. R. Rosenbaum, A. Milner, S. Hannahs, T. Murphy, E. Palm, and B. Brandt, J. Phys. B 294, 340 (2001).