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Volumn 63, Issue 6, 1988, Pages 2000-2005

Charge-transfer dipole moments at the Si-SiO2 interface

Author keywords

[No Author keywords available]

Indexed keywords


EID: 33745488548     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.341100     Document Type: Article
Times cited : (49)

References (24)
  • 11
    • 0142164651 scopus 로고    scopus 로고
    • Thermal Oxidation of Silicon in Dry Oxygen-Growth Kinetics and Charge Characterization in the Thin Regime
    • Tech. Rep. No. G502-S, Stanford Electronics Laboratories, Stanford University, Stanford, CA, June 1983.
    • Massoud, H.Z.1
  • 20
    • 84950837585 scopus 로고    scopus 로고
    • Abstract No. 109, Extended Abstracts, The Spring Meeting of the Electrochemical Society, May, 1970.
    • Kwon, Y.D.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.