Scaled CMOS with SiON and high-k

ECS Transactions

Volumn 2, Issue 2, 2006, Pages 317-327

  Ishimaru, K ^a   Takayanagi, M ^a   Watanabe, T ^a   Inaba, S ^a   Fujiwara, M ^a   Matsushita, D ^a  

^a TOSHIBA CORPORATION   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC DEVICES; FERMI LEVEL; LEAKAGE CURRENTS; MOSFET DEVICES; OPTIMIZATION; SEMICONDUCTING SILICON COMPOUNDS; THIN FILMS;

GATE INSULATOR THICKNESS; HIGH-K MATERIALS; MOSFET DIMENSIONS; SION FILMS;

CMOS INTEGRATED CIRCUITS;

EID: 33745479853     PISSN: 19385862     EISSN: 19386737     Source Type: Conference Proceeding    
DOI: 10.1149/1.2195669     Document Type: Conference Paper

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