Spontaneous formation of transition-metal nanoparticles on single-walled carbon nanotubes anchored with conjugated molecules

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Volumn 1, Issue 10, 2005, Pages 975-979

  Lee, Yoonmi ^a   Song, Hyun Jae ^a   Shin, Hyeon Suk ^a   Shin, Hyun Joon ^a   Choi, Hee Cheul ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

Author keywords

Carbon nanotubes; Nanoparticles; Noncovalent interactions; Transistors; Transition metals

Indexed keywords

CARBON NANOTUBES; CATALYST ACTIVITY; ELECTRIC CONDUCTANCE; ELECTRON TRANSITIONS; TRANSISTORS; TRANSITION METALS;

CONDUCTANCE-CHANGE MEASUREMENTS; CONJUGATED MOLECULES; NONCOVALENT INTERACTIONS; SINGLE-WALLED CARBON NANOTUBES (SWNT);

NANOSTRUCTURED MATERIALS;

CARBON; CARBON NANOTUBE; METAL NANOPARTICLE; NANOMATERIAL; NANOPARTICLE; RUTHENIUM CHLORIDE; RUTHENIUM DERIVATIVE; SILICON DIOXIDE;

ARTICLE; ATOMIC FORCE MICROSCOPY; CHEMISTRY; CRYSTALLIZATION; ELECTROCHEMISTRY; MATERIALS TESTING; METHODOLOGY; NANOTECHNOLOGY; SPECTROMETRY; TEMPERATURE;

CARBON; CRYSTALLIZATION; ELECTROCHEMISTRY; MATERIALS TESTING; METAL NANOPARTICLES; MICROSCOPY, ATOMIC FORCE; NANOPARTICLES; NANOSTRUCTURES; NANOTECHNOLOGY; NANOTUBES, CARBON; RUTHENIUM COMPOUNDS; SILICON DIOXIDE; SPECTROMETRY, X-RAY EMISSION; TEMPERATURE;

EID: 33745449974     PISSN: 16136810     EISSN: 16136829     Source Type: Journal    
DOI: 10.1002/smll.200500132     Document Type: Article

References (29)

1. a) T.W. Ebbesen, H.J. Lezec, H. Hiura, J.W. Bennett, H. F. Ghaemi, T. Thio, Nature 1996, 382, 54;
2. b) S.J. Tans, A. R. M. Versteueren, C. Dekker, Nature 1998, 393, 49;
3. c) M. Bockrath, D. H. Cobden, P. L. McEuen, N. G. Chopra, A. Zettl, A. Thess, R. E. Smalley, Science 1997, 275, 1922;
4. d) T. W. Tombler, C. Zhou, L. Alexseyev, J. Kong, H. Dai, L. Liu, C. S. Jayanthi, M. Tang, S.-Y. Wu, Nature 2000, 405, 769.
5. A. Javey, J. Guo, Q. Wang, M. Lundstrom, H. Dai, Nature 2003, 424, 654.
6. M. Shim, A. Javey, N. W. S. Kam, H. Dai, J. Am. Chem. Soc. 2001, 123, 11512.
7. L. Kavan, P. Rapta. L. Dunsch, M. J. Bronikowski, P. Willis, R. E. Smalley, J. Phys. Chem. A 2001, 105, 10764.
8. a) J. Kong, C. Zhou, E. Yenilmez, H. Dai, Appl. Phys. Lett. 2000, 77, 3977;
9. b) R. S. Lee, H. J. Kim, J. E. Fischer, A. Thess, R. E. Smalley, Nature 1997, 388, 255.
10. E. T. Thostenson, Z. Ren, T.-W. Chou, Compos. Sci. Technol. 2001. 61, 1899.
11. H. C. Choi, M. Shim, S. Bangsaruntip, H. Dai, J. Am. Chem. Soc. 2002. 124, 9058.
12. a) T. Sainsbury, D. Fitzmaurice, Chem. Mater. 2004, 16, 3780;
13. b) B. R. Azamian, K. S. Coleman, J. J. Davis, N. Hanson, M. L. H. Green, Chem. Commun. 2002, 366;
14. c) S. Banerjee, S. S. Wong, Nano Lett. 2002, 2, 195.
15. W.-Q. Man, A. Zettl, Nano Lett. 2003, 3, 681.
16. J. Zhao, J. P. Lu, J. Han, C.-K. Yang, Appl. Phys. Lett. 2003, 82, 3746.
17. J. Liu, M. J. Casavant, M. Cox, D.A. Walters, P. Boul, W. Lu, A.J. Rimberg, K. A. Smith, D.T. Colbert, R. E. Smalley, Chem. Phys. Lett. 1999, 303, 125.
18. a) P. Petit, C. Mathis, C. Journet, P. Bernier, Chem. Phys. Lett. 1999, 305, 370;
19. b) W. Zhao, C. Song, B. Zheng, J. Liu, T. Viswanathan, J. Phys. Chem. B 2002, 106, 293.
20. H. Kataura, Y. Kumazawa, Y. Maniwa, I. Umezu, S. Suzuki, Y. Ohtsuka, Y. Achiba, Synth. Met. 1999, 103, 2555.
21. Although there is no complete depletion region due to the coexistence of mixed semiconducting and metallic nanotube channels, the device shows a ≈50% conductance drop during the gate voltage sweep in the range of -10 to +10 V. This change is adequate to represent the modulation of the electrical conductance due to environment changes around the device. It has been previously shown that similar FET devices with multiple nanotube connections efficiently demonstrate gas-molecule detection at very low concentrations. See P. Qi, O. Vermesh, M. Grecu, A. Javey, Q. Wang, H. Dai, S. Peng, K. J. Cho, Nano Lett. 2003. 3, 347.
22. g curves were scanned by using a Pt gate electrode at a potential range of -0.5 to +0.5 V.
23. S. Heinze, J. Tersoff, R. Martel, V. Derycke, J. Appenzeller, P. Avouris, Phys. Rev. Lett. 2002, 89, 106801.
24. In Figure 5, the C1s peak of the carbon nanotube and the Terpy-coated nanotube show a little asymmetric curve toward high binding energy, which originates from contaminant carbon, such as -C=O species. Thus, all the peaks were further calibrated by the Cls peak (284.6 eV) of the carbon nanotube. See also Z. Liu, J.Y. Lee, W. Chen, M. Man, L. M. Gan, Langmuir 2004. 20, 181.
25. A. Lamouri, Y. Gofer, Y. Luo, G. S. Chottiner, D. A. Scherson, J. Phys. Chem. 52001, 105, 6172.
26. S. Sayan, S. Süzer, D. O. Uner, J. Mol. Struct. 1997, 430, 111.
27. I. Pollini, Phys. Rev. B 1994, 50, 2095.
28. C. Elmasides, D. I. Kondarides, W. Grünert, X. E. Verykios, J. Phys. Chem. B 1999, 103, 5227.
29. 2/Si substrates containing high-yield SWNTs to provide a 500 γγμμn gap between the source and drain electrodes (25 nm Au/15 nm Cr). The electrical properties of nanotube FET devices before and after the stepwise reactions were analyzed using a semiconductor analyzer (Keithley, 4200-SCS) with both electrochemical and Si gate electrodes.