Fluctuation model for p-n heterojunction solar cells

Solar Energy Materials and Solar Cells

Volumn 90, Issue 15, 2006, Pages 2496-2500

  Dmitruk, N L ^a   Borkovskaya, O Yu ^a   Mamontova, I B ^a   Basiuk, E V ^b   Saniger Blesa, J M ^b  

^a INSTITUTE OF SEMICONDUCTOR PHYSICS   (Ukraine)

^b UNIVERSIDAD NACIONAL AUTÓNOMA DE MÉXICO   (Mexico)

Author keywords

Anisotropic etching; Fluctuation model; Heterojunction solar cells; Microrelief interface

Indexed keywords

ELECTRIC CURRENTS; ELECTRIC POTENTIAL; ETCHING; HETEROJUNCTIONS; INTERFACES (MATERIALS); MATHEMATICAL MODELS; SEMICONDUCTING GALLIUM ARSENIDE;

ANISOTROPIC ETCHING; FLUCTUATION MODELS; HETEROJUNCTION SOLAR CELLS; MICRORELIEF INTERFACE;

SOLAR CELLS;

EID: 33745437118     PISSN: 09270248     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.solmat.2006.03.021     Document Type: Article

References (6)

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