Characterization of crystal lattice constant and strain of GaN epilayers with different AlxGa1-xN and AlN buffer layers grown on Si (111)

Wuli Xuebao/Acta Physica Sinica

Volumn 55, Issue 6, 2006, Pages 2977-2981

  Ding, Zhi Bo ^a   Yao, Shu De ^a   Wang, Kun ^a   Cheng, Kai ^b  

^a PEKING UNIVERSITY   (China)

^b IMEC   (Belgium)

Author keywords

Elastic strain; GaN; HRXRD; Rutherford backscattering channeling

Indexed keywords

EID: 33745419255     PISSN: 10003290     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

References (18)