Flash-assist RTP for ultra-shallow junctions

JOM

Volumn 58, Issue 6, 2006, Pages 32-34

  Camm, Dave M ^a   Gelpey, J C ^a   Thrum, T ^a   Stuart, G C ^a   McCoy, S ^a  

^a Mattson Technology Canada Inc   (Canada)

Author keywords

[No Author keywords available]

Indexed keywords

FLASH LAMP; THERMAL RESPONSE TIME; ULTRA-SHALLOW JUNCTIONS;

ARC LAMPS; CMOS INTEGRATED CIRCUITS; ION IMPLANTATION; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR JUNCTIONS; TEMPERATURE MEASUREMENT;

RAPID THERMAL ANNEALING;

EID: 33745322309     PISSN: 10474838     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11837-006-0177-7     Document Type: Review

References (8)

1. W. Lerch et al., "State of the Art Techniques for Ultra-Shallow Junction Formation," Electrochem. Soc. Proc. 2001-9 (2001), p. 321.
2. B. Ramachandran, R. Boas, and S. Ramamurthy, "Solutions for Ultra-Shallow Junctions - Improvements in Spike Anneal," Electrochem. Soc. Proc. 2002-11 (2002), p. 163.
3. R.S. Tichy et al., 9th International Conference on Advanced Thermal Processing of Semiconductors - RTP 2001 (Piscataway, NJ: IEEE, 2001), p. 87.
4. M. Lefrancois et al., "Source/Drain Extension Formed by Impulse Anneal," Electrochem. Soc. Proc. 2001-9 (2001) 297
5. G. Stuart, "Temperature Diagnostics for a Dual-Arc fRTP Tool," Advanced Thermal Processing of Semiconductors - RTP 2002, (2002), p. 77-85.
6. T. Ito et al., "Flashlamp Anneal Technology for Electrically Activating Ion Implanted Silicon," presented at the 2001 International Conference on Solid State Devices and Materials in Tokyo, Japan, 2001 Sept. 25-28.
7. T. Gebel et al., "Flash Lamp Annealing with Millisecond Pulses for Ultra-Shallow Boron Profiles in Silicon," Nuclear Instruments and Methods in Phys. Res. (Section B) Beam Interact Mater. Atoms (2002), 186, pp. 287-295.
8. I.S. Marshak, Pulsed Light Sources (New York: Plenum Publishing Corporation, 1984).