The relation between luminous properties and oxygen content in ZnS:TbOF thin-film electroluminescent devices fabricated by radio-frequency magnetron sputtering method

IEEE Transactions on Electron Devices

Volumn 45, Issue 4, 1998, Pages 757-762

  Wang, C W ^a   Liao, J Y ^a   Su, Y K ^b   Yokoyama, M ^b  

^a I SHOU UNIVERSITY   (Taiwan)

^b NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON HOLE PAIRS; ENERGY TRANSFER MODELS; LUMINESCENT PROCESS; LUMINOUS PROPERTIES; OXYGEN CONCENTRATIONS; PHOTOLUMINESCENT INTENSITY; RADIO-FREQUENCY-MAGNETRON SPUTTERING; THIN-FILM ELECTROLUMINESCENT;

DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC PROPERTIES; ELECTROLUMINESCENCE; ENERGY TRANSFER; OPTOELECTRONIC DEVICES; OXYGEN; THIN FILM DEVICES; ZINC SULFIDE;

LUMINANCE;

EID: 33745281334     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/16.662772     Document Type: Article

References (27)

1. Mach and G. O. Mueller, "Physics and technology of thin-film electroluminescent displays," Semiconduct. Sci. Technol., vol. 6, p. 305, 1991.
2. W. Kong, J. Fogarty, and R. Solanki, "Atomic layer epitaxy of ZnS : Tb thin-film electroluminescent devices," Appl. Phys. Lett., vol. 65, p. 670, 1994.
3. B. Huttl, U. Trappenz, K. O. Velthaus, C. R. Ronda, and R. H. Mauch, "Luminescence properties of SrS :Ce3+," J. Appl. Phys., vol. 78, no. 12, p. 7282, 1995.
4. K. Lobe, R. Boyn, and H. Zimmermann, "Excitation of the 4f-4f emission of donor-type rare-earth centers through donor-acceptor pair states (ZnS : Tm, ZnS : Sm)," J. Phys.: Condens. Matter, vol. 5, p. 6335, 1993.
5. Y. Abe, K. Onisawa, K. Tamura, T. Nakayama, M. Hanazono, and Y. A. Ono, "White light emitting thin-film electroluminescent cells with SrS : Pr, Ce active layer and their application to multicolor electroluminescent devices," Jpn. J. Appl. Phys., vol. 28, p. 1373, 1989.
6. A. Mikami, T. Ogura, K. Taniguchi, M. Yoshida, and S. Nakajima, "Tb-F emission centers in ZnS : Tb, F thin-film electroluminescent devices," J. Appl. Phys., vol. 61, no. 8, p. 3028, 1987.
7. D. Kahng, "Electroluminescence of rare-earth and transition metal molecules in II-VI compounds via impact excitation," Appl. Phys. Lett., vol. 13, no. 6, p. 210, 1968.
8. P. Benalloul, J. Benoit, and A. Geoffory, "TbF3 complex center in ZnS ACTFEL devices," J. Cryst. Growth, vol. 72, p. 553, 1985.
9. H. Kobayashi, S. Tanaka, V. Shanker, M. Shiiki, T. Kunou, J. Mita, and H. Sasakura, "Multicolor electroluminescent ZnS thin films doped with rare earth fluorides," Phys. Status Solidi., vol. A88, p. 713, 1985.
10. T. Ogura, A. Mikami, K. Tanaka, K. Taniguchi, M. Yoshida, and S. Nakajima, "High-brightness green-emitting electroluminescent devices with ZnS : TbF active layers," Appl. Phys. Lett., vol. 48, p. 1570, 1986.
11. K. Okamoto and K. Watanabe, "Electroluminescence and photoluminescence in sputtered ZnS : TbFx thin films," Appl. Phys. Lett., vol. 49, p. 578, 1986.
12. K. Okamato, T. Yoshimi, and S. Miura, "TbOF complex centers in ZnS thin-film electroluminescent devices," Appl. Phys. Lett., vol. 53, p. 678, 1988.
13. C. Tsakonas and C. B. Thomas, "Role of sulfur vacancies on the electrical characteristics of sputtered films of ZnS," J. Appl. Phys., vol. 78, no. 10, p. 6098, 1995.
14. S. K. Tiku and S. H. Rustonji, "Dielectrics for bright EL displays," IEEE Trans. Electron Devices, vol. 36, p. 1947, Sept. 1989.
15. R. Young and A. H. Kitai, "Electrical dependence of ZnS thin films exposed to H2O," J. Electrochem. Soc., vol. 139, no. 9, p. 2673, 1992.
16. E. W. Chase, R. T. Hepplewhite, D. C. Krupka, and D. Kahng, "Electroluminescence of ZnS lumocen devices containing rare-earth and transition-metal fluorides," J. Appl. Phys., vol. 40, p. 2512, 1969.
17. R. Tornqvist and S. Korpela, "On the aging of ZnS :Mn electroluminescent thin films grown by the atomic layer epitaxy technique," J. Cryst. Growth, vol. 59, p. 395, 1982.
18. D. L. Dexter, "A theory of sensitized luminescence in solids," J. Chem. Phys., vol. 21, p. 836, 1953.
19. D. V. Lang, "Fast capactance transient appartus: Application to ZnO and O centers in GaP p-n junctions," J. Appl. Phys., vol. 45, no. 7, p. 3014, 1974.
20. D. C. Krupka and D. M. Mahoney, "Electroluminescence and photoluminescence of thin films of ZnS doped with rare-earth metals," J. Appl. Phys., vol. 43, p. 2314, 1972.
21. W. M. Ang, S. Pennathur, L. Pham, J. F. Wager, S. M. Goodnick, and A. A. Douglas, "Evidence for band-to-band impact ionization in evaporated ZnS :Mn alternating-current thin-film electroluminescent devices," J. Appl. Phys., vol. 77, no. 6, p. 2719, 1995.
22. K. Streicher, T. K. Plant, and J. F. Wager, "Hot-electron impact excitation of ZnS : Tb alternating-current thin-film electroluminescent devices," J. Appl. Phys., vol. 78, no. 3, p. 2101, 1995.
23. T. Hoshina and H. Kawai, "Luminescence excitation spectra and their exciton structures of ZnS phosphors," Jpn. J. Appl. Phys., vol. 19, p. 267, 1980.
24. V. Marrello, L. Samvelson, and A. Onton, "Probe layer measurements of electroluminescence excitation in ac thin-film devices," J. Appl. Phys., vol. 52, p. 3590, 1981.
25. K. Okamoto and S. Miura, "Excitation mechanism in thin-film electroluminescent devices," Appl. Phys. Lett., vol. 49, p. 1596, 1986.
26. A. Mikami, T. Ogvra, K. Taniguchi, M. Yoshida, and S. Nakajima, "Excitation process of the Tb emission center in a ZnS : Tb, F thin-film electroluminescent device," J. Appl. Phys., vol. 64, no. 7, p. 3650, 1989.
27. W. E. Howard, "Memory in thin-film electroluminescent displays," J. Lumin., vol. 23, p. 155, 1981.