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Volumn 15, Issue 4-8, 2006, Pages 542-547

Comparison of MWPCVD diamond growth at low and high process gas pressures

Author keywords

CVD deposition; Diamond growth and characterisation; High growth rate; In situ analysis

Indexed keywords

CONCENTRATION (PROCESS); INTERFEROMETRY; MASS SPECTROMETRY; MICROWAVE DEVICES; PLASMA APPLICATIONS; PRESSURE EFFECTS;

EID: 33745279139     PISSN: 09259635     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.diamond.2006.01.010     Document Type: Article
Times cited : (32)

References (12)
  • 2
    • 0001394376 scopus 로고
    • Lettingham A., and Steeds J.W. (Eds), Chapman and Hall, London
    • Butler J.E., and Wood R.L. In: Lettingham A., and Steeds J.W. (Eds). Thin Film Diamond (1993), Chapman and Hall, London 15
    • (1993) Thin Film Diamond , pp. 15
    • Butler, J.E.1    Wood, R.L.2
  • 5
    • 0041360236 scopus 로고
    • Dismukes J.P., and Ravi K.V. (Eds), The Electrochemical Society, Pennington
    • Wang Y., and Angus J.C. In: Dismukes J.P., and Ravi K.V. (Eds). Proc. 3rd Intl. Symp. Diamond Materials (1993), The Electrochemical Society, Pennington 249
    • (1993) Proc. 3rd Intl. Symp. Diamond Materials , pp. 249
    • Wang, Y.1    Angus, J.C.2
  • 10
    • 0242439487 scopus 로고    scopus 로고
    • (RD42 Collaboration)
    • Adam W., et al., (RD42 Collaboration). Nucl. Instrum. Methods A 514 (2003) 79
    • (2003) Nucl. Instrum. Methods A , vol.514 , pp. 79
    • Adam, W.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.