Solid-liquid interface energy of silicon

Acta Materialia

Volumn 54, Issue 12, 2006, Pages 3227-3232

  Jian, Zengyun ^a   Kuribayashi, Kazuhiko ^b   Jie, Wanqi ^c   Chang, Fange ^a  

^a XI'AN UNIVERSITY OF TECHNOLOGY   (China)

^b JAPAN AEROSPACE EXPLORATION AGENCY   (Japan)

^c NORTHWESTERN POLYTECHNICAL UNIVERSITY   (China)

Author keywords

Intermediary growth; Silicon; Solid liquid interface energy; Undercooling

Indexed keywords

CRYSTAL GROWTH; GRAIN BOUNDARIES; INTERFACES (MATERIALS); INTERFACIAL ENERGY; NUCLEATION;

INTERMEDIARY GROWTH; SOLID-LIQUID INTERFACE ENERGY; UNDERCOOLING;

SEMICONDUCTING SILICON;

EID: 33745260916     PISSN: 13596454     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.actamat.2006.03.009     Document Type: Article

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