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Volumn 20, Issue 1, 2006, Pages 56-60

Study of optical properties and electronic structure of V in ZnS by first principles

Author keywords

Impurity; Optical property; Supercell

Indexed keywords

CALCULATIONS; CHEMICAL BONDS; CRYSTALS; ELECTRON ENERGY LEVELS; ELECTRONIC STRUCTURE; IMPURITIES; VANADIUM; ZINC SULFIDE;

EID: 33745161412     PISSN: 10005773     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article
Times cited : (11)

References (12)
  • 2
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    • Many-electron multiplet effects in the spectra of 3 d impurities in heteropolar semiconductors
    • Fazzio M, Caldas J, Zunger A. Many-Electron Multiplet Effects in the Spectra of 3 d Impurities in Heteropolar Semiconductors[J]. Phys Rev B, 1984, 30: 3430-3455.
    • (1984) Phys Rev B , vol.30 , pp. 3430-3455
    • Fazzio, M.1    Caldas, J.2    Zunger, A.3
  • 4
    • 1542471122 scopus 로고    scopus 로고
    • A study of the electronic structure of ZnS(111)
    • Chinese source
    • Ban D Y, Zhang H F, Li Y P, et al. A Study of the Electronic Structure of ZnS(111)[J]. Acta Physica Sinica, 1996, 45(9): 1526-1535. (in Chinese)
    • (1996) Acta Physica Sinica , vol.45 , Issue.9 , pp. 1526-1535
    • Ban, D.Y.1    Zhang, H.F.2    Li, Y.P.3
  • 5
    • 0001677421 scopus 로고
    • Quasiparticle band structures of Six II-VI compounds: ZnS, ZnSe, ZnTe, CdS, CdSe, and CdTe
    • Zakharov O, Rubio A, Blasé X, et al. Quasiparticle Band Structures of Six II-VI Compounds: ZnS, ZnSe, ZnTe, CdS, CdSe, and CdTe[J]. Phys Rev B, 1994, 50: 10780-10787.
    • (1994) Phys Rev B , vol.50 , pp. 10780-10787
    • Zakharov, O.1    Rubio, A.2    Blasé, X.3
  • 6
    • 0000819062 scopus 로고
    • Atomic and electronic structure of ZnS cleavage surfaces
    • Wang Y R, Duke C B. Atomic and Electronic Structure of ZnS Cleavage Surfaces[J]. Phys Rev B, 1987, 36: 2763-2769.
    • (1987) Phys Rev B , vol.36 , pp. 2763-2769
    • Wang, Y.R.1    Duke, C.B.2
  • 7
    • 19244366272 scopus 로고    scopus 로고
    • Collapse and revivals of exciton emission in a semiconductor microcavity: Detuning and phase-space filling effects
    • Jin G R, Liu W M. Collapse and Revivals of Exciton Emission in a Semiconductor Microcavity: Detuning and Phase-Space Filling Effects[J]. Phys Rev B, 2004, 70: 0138031-0138036.
    • (2004) Phys Rev B , vol.70 , pp. 0138031-0138036
    • Jin, G.R.1    Liu, W.M.2
  • 8
    • 0024715555 scopus 로고
    • First-principles calculations of multiplet structures of transition metal deep impurities in II-VI and III-V semiconductors
    • Watanabe S, Kamimura H. First-Principles Calculations of Multiplet Structures of Transition Metal Deep Impurities in II-VI and III-V Semiconductors[J]. Mater Sci Eng B, 1989, 3: 313-324.
    • (1989) Mater Sci Eng B , vol.3 , pp. 313-324
    • Watanabe, S.1    Kamimura, H.2
  • 10
    • 4243943295 scopus 로고    scopus 로고
    • Generalized gradient approximation made simple
    • Perdew J P, Burke K, Ernzerhof M. Generalized Gradient Approximation Made Simple[J]. Phys Rev Lett, 1996, 77: 3865-3868.
    • (1996) Phys Rev Lett , vol.77 , pp. 3865-3868
    • Perdew, J.P.1    Burke, K.2    Ernzerhof, M.3
  • 11
    • 0347056769 scopus 로고    scopus 로고
    • Ab initio calculation of the electronic structure of carbon and oxygen impurities in GaN
    • Chinese source
    • Shen Y W, Kang J Y. Ab Initio Calculation of the Electronic Structure of Carbon and Oxygen Impurities in GaN[J]. Acta Physica Sinica, 2002, 51(3): 645-648. (in Chinese)
    • (2002) Acta Physica Sinica , vol.51 , Issue.3 , pp. 645-648
    • Shen, Y.W.1    Kang, J.Y.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.