S-RCAT (Sphere-shaped-Recess-Channel-Array Transistor) Technology for 70nm DRAM feature size and beyond

Digest of Technical Papers - Symposium on VLSI Technology

Volumn 2005, Issue , 2005, Pages 34-35

  Kim, J Y ^c   Oh, H J ^c   Woo, D S ^c   Lee, Y S ^c   Kim, D H ^c   Kim, S E ^c   Ha, G W ^c   Kim, H J ^c   Kang, N J ^c   Park, J M ^c   Hwang, Y S ^c   Kim, D I ^c   Park, B J ^c   Huh, M ^c   Lee, B H ^c   Kim, S B ^c   Cho, M H ^c   Jung, M Y ^c   Kim, Y I ^c   Jin, C ^c   Shin, D W ^c   Shim, M S ^c   Lee, C S ^a   Lee, W S ^a   Park, J C ^b   Jin, G Y ^c   Park, Y J ^c   Kim, Kinam ^c   more..

^a CAE Team   (South Korea)

^b Design Technology Team   (South Korea)

^c SAMSUNG Electronics   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

LEAKAGE CURRENTS; SEMICONDUCTOR JUNCTIONS; TRANSISTORS; VLSI CIRCUITS;

DATA RETENTION TIME; DRAM ARRAY TRANSISTOR; RECESS-CHANNEL-ARRAY TRANSISTOR; SUBTHRESHOLD SWING;

DYNAMIC RANDOM ACCESS STORAGE;

EID: 33745146876     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/.2005.1469201     Document Type: Conference Paper

References (3)

1. J. Y. Kim et al., Symp. on VLSI Tech., pp.11-12, 2003
2. H.S. Kim et al., IEDM, pp411-414, Dec. 2003
3. J.Y. Kim et al., VLSI-TSA, Apr. 2005