Effect of vanadium doping on ferroelectric and electrical properties of Bi3.25La0.75Ti3O12 thin film

Journal of Electroceramics

Volumn 16, Issue 3, 2006, Pages 207-211

  Kim, Jin Soo ^a   Lee, Hai Joon ^b   Kim, Ill Won ^b   Jin, Byung Moon ^c  

^a Pusan National University   (South Korea)

^b University of Ulsan   (South Korea)

^c Dong Eui University   (South Korea)

Author keywords

Ferroelectric thin film; FRAM; Leakage current; Vanadium doped BLT

Indexed keywords

DOPING (ADDITIVES); ELECTRIC FIELD EFFECTS; ELECTRIC PROPERTIES; ELECTROMAGNETIC WAVE POLARIZATION; FERROELECTRIC MATERIALS; LEAKAGE CURRENTS; PULSED LASER DEPOSITION; SILICON; SUBSTRATES; TITANIUM OXIDES; VANADIUM; X RAY DIFFRACTION ANALYSIS;

FERROELECTRIC THIN FILM; FRAM; SCHOTTKY EMISSION BEHAVIOR; VANADIUM DOPED BLT;

THIN FILMS;

EID: 33744972599     PISSN: 13853449     EISSN: 15738663     Source Type: Journal    
DOI: 10.1007/s10832-006-6359-4     Document Type: Article

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