Reeves's circular transmission line model and its scope of application to extract specific contact resistance

Solid-State Electronics

Volumn 50, Issue 5, 2006, Pages 843-847

  Xu, Chuan ^a   Wang, Jinyan ^a   Wang, Maojun ^a   Jin, Haiyan ^a   Hao, Yilong ^a   Wen, Cheng P ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

Contact end resistance; Reeves's CTLM; Transfer length

Indexed keywords

FEATURE EXTRACTION; MATHEMATICAL MODELS; MEASUREMENT THEORY;

CONTACT END RESISTANCE; REEVES'S CTLM; SPECIFIC CONTACT LENGTH; TRANSFER LENGTH;

SOLID STATE DEVICES;

EID: 33744929110     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2006.03.007     Document Type: Article

References (12)

1. Reeves G.K. Specific contact resistance using a circular transmission line model. Solid-State Electron 23 5 (1980) 487-490
2. Harrison H.B., and Reeves G.K. Ohmic contacts formed on single-crystalline and polycrystalline silicon using ion-implantation and low-temperature annealing. IEEE Electron Dev Lett 5 (1984) 53-57
3. Crofton J., Barnes P.A., Williams J.R., and Edmond J.A. Contact resistance measurements on p-type 6H-SiC. Appl Phys Lett 62 4 (1993) 384-386
4. Arai T., Sueyoshi H., Koide Y., Moriyama M., and Murakami M. Development of Pt-based ohmic contact materials for p-type GaN. J Appl Phys 89 5 (2001) 2826-2831
5. Deeb C., and Heuer AH. A low-temperature route to thermodynamically stable ohmic, contacts to n-type 6H-SiC. Appl Phys Lett 84 7 (2004) 1117-1119
6. Kriz J., Gottfried K., Kaufmann C., and Gessner T. Determination of ohmic contacts to n-type 6H- and polycrystalline 3C-SiC using circular transmission line structures. Diamond Relat Mater 7 1 (1998) 77-80
7. Xue S., Han Y., Wu Z., and Luo Y. Measurement of specific contact resistivity of ohmic contact on p-GaN. Chin J Semicond 26 5 (2005) 965-969
8. Cao C. An accurate measurement method of specific ohm-contact resistance. Res Progr SSE 25 2 (2005) 276-279
9. Wu C. Methods of mathematical physics (1999), Peking University Press, Beijing p. 435-8
10. Reeves G.K., and Harrison H.B. Obtaining the specific contact resistance from transmission line model measurements. IEEE Electron Dev Lett 3 5 (1982) 111-113
11. Alok D, Baliga BJ, McLarty PK. Low contact resistivity ohmic contacts to 6H-silicon carbide. In: IEDM Tech Dig; 1993. p. 691-4.
12. Marlow G.S., and Das M.B. The effects of contact size and non-zero metal resistance on the determination of specific contact resistance. Solid-State Electron 25 2 (1982) 91-94