-
1
-
-
0016552293
-
100% internal quantum efficiency of radiative recombination in the three-layer AlAs-GaAs heterojunction light-emitting diodes
-
Zh. I. Alferov, V. M. Andreev, D. Z. Garbuzov, and V. D. Rumiantsev, 100% internal quantum efficiency of radiative recombination in the three-layer AlAs-GaAs heterojunction light-emitting diodes, Sov. Phys. Semicond. 9(3), 305-309 (1975).
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Alferov, Zh.I.1
Andreev, V.M.2
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Rumiantsev, V.D.4
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2
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-
0004133466
-
Single quantum well InGaAsP and AlGaAs lasers: A study of some peculiarities
-
Peter S. Zory, Jr. (Edit), Academic Press, Inc.
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D. Z. Garbuzov and V. B. Khalfin, Single quantum well InGaAsP and AlGaAs lasers: A study of some peculiarities, in Quantum well lasers, Peter S. Zory, Jr. (Edit), Academic Press, Inc., 277-327 (1993).
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Quantum Well Lasers
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Garbuzov, D.Z.1
Khalfin, V.B.2
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3
-
-
0001041014
-
Investigation of the influence of the AlAs-GaAs heterostructure parameters on the laser threshold current and realization of the continuous emission at room temperature
-
Zh. I. Alferov, V. M. Andreev, D. Z. Garbuzov, Yu. V. Zhilyaev, E. P. Morozov, E. L. Portnoi, and V. G. Trofim, Investigation of the influence of the AlAs-GaAs heterostructure parameters on the laser threshold current and realization of the continuous emission at room temperature, Sov. Phys. Semicond. 4(9), 1573-1575 (1970).
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Alferov, Zh.I.1
Andreev, V.M.2
Garbuzov, D.Z.3
Zhilyaev, Yu.V.4
Morozov, E.P.5
Portnoi, E.L.6
Trofim, V.G.7
-
4
-
-
10844295488
-
Coherent radiation of epitaxial heterojunction structures in the AlAs-GaAs system
-
Zh. I. Alferov, V. M. Andreev, V. I. Korol'kov, E. L. Portnoi, and D. N. Tret'yakov, Coherent radiation of epitaxial heterojunction structures in the AlAs-GaAs system, Sov. Phys. Semicond. 2(10), 1289-1291 (1969).
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Sov. Phys. Semicond
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Alferov, Zh.I.1
Andreev, V.M.2
Korol'Kov, V.I.3
Portnoi, E.L.4
Tret'Yakov, D.N.5
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5
-
-
0014820234
-
1-xAs-GaAs heterojunctions
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1-xAs-GaAs heterojunctions, Sov. Phys. Semicond. 4(1), 132-137 (1970).
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Sov. Phys. Semicond
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Alferov, Zh.I.1
Andreev, V.M.2
Korol'Kov, V.I.3
Portnoy, E.L.4
Tret'Iakov, D.N.5
-
6
-
-
33744934297
-
Liquid-phase epitaxial growth of ultra-thin GaAs layers on a GaAlAs substrate
-
G.T.Aitieva, V.N.Bessolov, A.T.Denisova, S.E.Klimenko, S.A. Kukushkin, M. V. Lebedev, and B. N. Tsarenkov, Liquid-phase epitaxial growth of ultra-thin GaAs layers on a GaAlAs substrate, Sov. Phys. Tech. Phys. 31(5), 552-554 (1986).
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Aitieva, G.T.1
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Klimenko, S.E.4
Kukushkin, S.A.5
Lebedev, M.V.6
Tsarenkov, B.N.7
-
7
-
-
0042966135
-
Relaxation liquid phase epitaxy based on reversal of the mass transport and its potential for making ultrathin layers of III-V materials
-
V. N. Bessolov, S. A. Kukushkin, M. V. Lebedev, and B. V. Tsarenkov, Relaxation liquid phase epitaxy based on reversal of the mass transport and its potential for making ultrathin layers of III-V materials, Sov. Phys. Tech. Phys. 33(8), 902-905 (1988).
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Bessolov, V.N.1
Kukushkin, S.A.2
Lebedev, M.V.3
Tsarenkov, B.V.4
-
8
-
-
33744944113
-
Experimental confirmation of model of relaxation liquid epitaxy with reversal of mass transport for making ultrathin III-V films
-
V. N. Bessolov, S. G. Konnikov, M. V. Lebedev, K. Yu. Pogrebitskii, and B. V. Tsarenkov, Experimental confirmation of model of relaxation liquid epitaxy with reversal of mass transport for making ultrathin III-V films, Sov. Phys. Tech. Phys. 35(1), 99-101 (1990).
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Sov. Phys. Tech. Phys.
, vol.35
, Issue.1
, pp. 99-101
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Bessolov, V.N.1
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Lebedev, M.V.3
Pogrebitskii, K.Yu.4
Tsarenkov, B.V.5
-
9
-
-
0041964363
-
Relaxation liquid phase epitaxy with mass-transport reversal: Model and experiment
-
T. V. Sakalo, V. N. Bessolov, S. A. Kukushkin, M. V. Lebedev, and B. V. Tsarenkov, Relaxation liquid phase epitaxy with mass-transport reversal: Model and experiment, Sov. Phys. Tech. Phys. 37(3), 289-292 (1992).
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, pp. 289-292
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Sakalo, T.V.1
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Lebedev, M.V.4
Tsarenkov, B.V.5
-
10
-
-
33744916614
-
1-xAs epitaxial layers from the limited melt volume
-
1-xAs epitaxial layers from the limited melt volume, Sov. Phys. Tech. Phys. 23(8), 1096-1098 (1978).
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(1978)
Sov. Phys. Tech. Phys.
, vol.23
, Issue.8
, pp. 1096-1098
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Andreev, V.M.1
Syrbu, A.V.2
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11
-
-
84984289183
-
Investigation of a new LPE method of obtaining Al-Ga-As heterostructures
-
Zh. I. Alferov, V. M. Andreev, S. G. Konnikov, V. R. Larionov, and G. N. Shelovanova, Investigation of a new LPE method of obtaining Al-Ga-As heterostructures, Kristall und Technik 10(2), 103-110 (1975).
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(1975)
Kristall und Technik
, vol.10
, Issue.2
, pp. 103-110
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-
Alferov, Zh.I.1
Andreev, V.M.2
Konnikov, S.G.3
Larionov, V.R.4
Shelovanova, G.N.5
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12
-
-
0242378052
-
1-xAs heterostructures
-
1-xAs heterostructures, Kristall und Technik 11(10), 1013-1020 (1976).
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(1976)
Kristall und Technik
, vol.11
, Issue.10
, pp. 1013-1020
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-
Alferov, Zh.I.1
Andreev, V.M.2
Konnikov, S.G.3
Larionov, V.R.4
Pushny, B.V.5
-
13
-
-
33744907565
-
Low-temperature liquid-phase epitaxy of AlGaAs heterostructures with sub-micron (10-1-10-2 μm) layers
-
V. M. Andreev, O. O. Ivent'eva, S. G. Konnikov, K. Yu. Pogrebitskii, E. Puron, O. V. Sulima, and N. N. Faleev, Low-temperature liquid-phase epitaxy of AlGaAs heterostructures with sub-micron (10-1-10-2 μm) layers, Sov. Tech. Phys. Lett. 12(12), 217-219 (1986).
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Sov. Tech. Phys. Lett.
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Andreev, V.M.1
Ivent'Eva, O.O.2
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Pogrebitskii, K.Yu.4
Puron, E.5
Sulima, O.V.6
Faleev, N.N.7
-
14
-
-
0017929960
-
Fabrication of AlAs-GaAs heterostructures by selective liquid-phase epitaxy
-
Zh. I. Alferov, V. M. Andreev, B. V. Egorov, S. G. Konnikov, and V. M. Lantratov, Fabrication of AlAs-GaAs heterostructures by selective liquid-phase epitaxy, Sov. Phys. Tech. Phys. 23(2), 209-214 (1978).
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Sov. Phys. Tech. Phys.
, vol.23
, Issue.2
, pp. 209-214
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-
Alferov, Zh.I.1
Andreev, V.M.2
Egorov, B.V.3
Konnikov, S.G.4
Lantratov, V.M.5
-
15
-
-
0041793318
-
thr = 2.1 mA, 300 K) stripe-geometry quantum-well AlGaAs heterostructure lasers fabricated by low-temperature liquid-phase epitaxy
-
thr = 2.1 mA, 300 K) stripe-geometry quantum-well AlGaAs heterostructure lasers fabricated by low-temperature liquid-phase epitaxy, Sov. Tech. Phys. Lett. 14(4), 893-894 (1988).
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Sov. Tech. Phys. Lett.
, vol.14
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, pp. 893-894
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Alferov, Zh.I.1
Andreev, V.M.2
Aksenov, V.Yu.3
Nalet, T.N.4
Tkhan'Fyong, N.5
Rumyantsev, V.D.6
Khvostikov, V.P.7
-
16
-
-
33744903998
-
High-efficiency heterojunction LED with spherical radiating surface
-
Zh. I. Alferov, V. M. Andreev, B. V. Egorov, and A. V. Syrbu, High-efficiency heterojunction LED with spherical radiating surface, Sov. Tech. Phys. Lett. 3(8), 293-294 (1977).
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Sov. Tech. Phys. Lett.
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, Issue.8
, pp. 293-294
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-
Alferov, Zh.I.1
Andreev, V.M.2
Egorov, B.V.3
Syrbu, A.V.4
-
17
-
-
0017548062
-
Heterojunction light-emitting Al-Ga-As diodes formed by negative profiling of substrate
-
Zh. I. Alferov, V. M. Andreev, B. V. Egorov, and A. V. Syrbu, Heterojunction light-emitting Al-Ga-As diodes formed by negative profiling of substrate, Sov. Phys. Semicond. 11(10), 1123-1127 (1977).
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(1977)
Sov. Phys. Semicond.
, vol.11
, Issue.10
, pp. 1123-1127
-
-
Alferov, Zh.I.1
Andreev, V.M.2
Egorov, B.V.3
Syrbu, A.V.4
-
18
-
-
33744917334
-
Efficient "red" LED with multiple-pass heterostructure
-
Zh. I. Alferov, V. M. Andreev, D. Z. Garbuzov, N. Yu. Davidyuk, and L. T. Chichya, Efficient "red" LED with multiple-pass heterostructure, Sov. Tech. Phys. Lett. 4(3), 99-100 (1978).
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(1978)
Sov. Tech. Phys. Lett.
, vol.4
, Issue.3
, pp. 99-100
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Alferov, Zh.I.1
Andreev, V.M.2
Garbuzov, D.Z.3
Davidyuk, N.Yu.4
Chichya, L.T.5
-
19
-
-
33744947875
-
e = 29% at 300 K)
-
e = 29% at 300 K), Sov. Tech. Phys. Lett. 2(12), 420-421. (1976).
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(1976)
Sov. Tech. Phys. Lett.
, vol.2
, Issue.12
, pp. 420-421
-
-
Alferov, Zh.I.1
Andreev, V.M.2
Garbuzov, D.Z.3
Davidyuk, N.Yu.4
Larionov, V.R.5
Chichya, L.T.6
-
20
-
-
0017541782
-
Photocells with intermediate radiation conversion and enhanced concentration of solar radiation (K = 2500)
-
Zh. I. Alferov, V. M. Andreev, D. Z. Garbuzov, V. R. Larionov, and V. D. Rumiantsev, Photocells with intermediate radiation conversion and enhanced concentration of solar radiation (K = 2500), Sov. Tech. Phys. Lett. 3(10), 449-450 (1977).
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(1977)
Sov. Tech. Phys. Lett.
, vol.3
, Issue.10
, pp. 449-450
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-
Alferov, Zh.I.1
Andreev, V.M.2
Garbuzov, D.Z.3
Larionov, V.R.4
Rumiantsev, V.D.5
-
21
-
-
33744928962
-
Al-Ga-As heterostructure photocell with a transition layer
-
Zh. I. Alferov, V. M. Andreev, Yu. M. Zadiranov, V. I. Korol'kov, and T. S. Tabarov, Al-Ga-As heterostructure photocell with a transition layer, Sov. Tech. Phys. Lett. 4(3), 124-125 (1978).
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(1978)
Sov. Tech. Phys. Lett.
, vol.4
, Issue.3
, pp. 124-125
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-
Alferov, Zh.I.1
Andreev, V.M.2
Zadiranov, Yu.M.3
Korol'Kov, V.I.4
Tabarov, T.S.5
-
22
-
-
33744935615
-
1-x As graded band-gap heterostructures
-
1-x As graded band-gap heterostructures, Sov. Tech. Phys. Lett. 4(4), 149-150 (1978).
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(1978)
Sov. Tech. Phys. Lett.
, vol.4
, Issue.4
, pp. 149-150
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-
Alferov, Zh.I.1
Andreev, V.M.2
Zadiranov, Yu.M.3
Korol'Kov, V.I.4
Rakhimov, N.5
Tabarov, T.S.6
-
23
-
-
33744946119
-
AlGaAs-GaAs graded-heterostructure photocells with expanded sensitivity spectrum
-
Zh. I. Alferov, V. M. Andreev, M. B. Kagan, V. I. Korol'kov, T. S. Tabarov, and F. M. Tadzhibaev, AlGaAs-GaAs graded-heterostructure photocells with expanded sensitivity spectrum, Sov. Tech. Phys. Lett. 3(8), 294-296 (1977).
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Sov. Tech. Phys. Lett.
, vol.3
, Issue.8
, pp. 294-296
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Alferov, Zh.I.1
Andreev, V.M.2
Kagan, M.B.3
Korol'Kov, V.I.4
Tabarov, T.S.5
Tadzhibaev, F.M.6
-
25
-
-
0015079919
-
1-xAs- GaAs heterojunctions
-
1-xAs-GaAs heterojunctions, Sov. Phys. Semicond. 4(12), 2047-2048 (1971).
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(1971)
Sov. Phys. Semicond.
, vol.4
, Issue.12
, pp. 2047-2048
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-
Alferov, Zh.I.1
Andreev, V.M.2
Kagan, M.B.3
Protasov, I.I.4
Trofim, V.G.5
-
26
-
-
33744919365
-
Heterojunction bipolar transistor made by low-temperature liquid phase epitaxy
-
V. M. Andreev, A. B. Guchmasov, T. V. Decal'chuk, Yu. M. Zadiranov, V. S. Kalinovskii, and A. M. Koinova, Heterojunction bipolar transistor made by low-temperature liquid phase epitaxy, Sov. Tech. Phys. Lett. 12(6), 296-297 (1986).
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Sov. Tech. Phys. Lett.
, vol.12
, Issue.6
, pp. 296-297
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Andreev, V.M.1
Guchmasov, A.B.2
Decal'Chuk, T.V.3
Zadiranov, Yu.M.4
Kalinovskii, V.S.5
Koinova, A.M.6
-
28
-
-
0041793319
-
AlGaAs heterostructures with quantum-well layers, fabricated by low-temperature liquid-phase epitaxy
-
Zh. I. Alferov, V. M. Andreev, A. A. Vodnev, S. G. Konnikov, V. R. Larionov, K. Yu. Pogrebitskii, V. D. Rymiantsev, and V. P. Khvostikov, AlGaAs heterostructures with quantum-well layers, fabricated by low-temperature liquid-phase epitaxy, Sov. Tech. Phys. Lett. 12(9), 450-451 (1986).
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Sov. Tech. Phys. Lett.
, vol.12
, Issue.9
, pp. 450-451
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-
Alferov, Zh.I.1
Andreev, V.M.2
Vodnev, A.A.3
Konnikov, S.G.4
Larionov, V.R.5
Pogrebitskii, K.Yu.6
Rymiantsev, V.D.7
Khvostikov, V.P.8
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29
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0034298986
-
Growth and doping of GaAs and AlGaAs layers by low-temperature liquid-phase epitaxy
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M. Milanova and V. Khvostikov. Growth and doping of GaAs and AlGaAs layers by low-temperature liquid-phase epitaxy, Journal of Crystal Growth 219, 193-198 (2000).
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Journal of Crystal Growth
, vol.219
, pp. 193-198
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-
Milanova, M.1
Khvostikov, V.2
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30
-
-
33744947132
-
th = 3.0 mA, T = 300 K) buried-heterostructure AlGaAs quantum-well laser diodes prepared by liquid-phase epitaxy
-
th = 3.0 mA, T = 300 K) buried-heterostructure AlGaAs quantum-well laser diodes prepared by liquid-phase epitaxy, Sov. Tech. Phys. Lett. 16(3), 192-193 (1990).
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(1990)
Sov. Tech. Phys. Lett.
, vol.16
, Issue.3
, pp. 192-193
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-
Alferov, Zh.I.1
Andreev, V.M.2
Andriesh, A.M.3
Mereutse, A.Z.4
Syrbu, A.V.5
Yakovlev, V.P.6
-
31
-
-
33744933253
-
th = 1.3 mA, T = 300 K) quantum-well AlGaAs lasers with uncoated mirrors prepared by liquid-phase epitaxy
-
th = 1.3 mA, T = 300 K) quantum-well AlGaAs lasers with uncoated mirrors prepared by liquid-phase epitaxy, Sov. Tech. Phys. Lett. 16(5), 339-340 (1990).
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(1990)
Sov. Tech. Phys. Lett.
, vol.16
, Issue.5
, pp. 339-340
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-
Alferov, Zh.I.1
Andreev, V.M.2
Mereutse, A.Z.3
Syrbu, A.V.4
Suruchanu, G.I.5
Yakovlev, V.P.6
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32
-
-
0016598302
-
Radiativa characteristics of InP-GaInAsP laser heterostructures
-
A. P. Bogatov, L. M. Dolginov, P. G. Eliseev, M. G. Mel'vidskii, B. N. Sverdlov, and E. G. Shevchenko, Radiativa characteristics of InP-GaInAsP laser heterostructures, Sov. Phys. Semicond. 9(10), 1282-1285 (1975).
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Sov. Phys. Semicond.
, vol.9
, Issue.10
, pp. 1282-1285
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Bogatov, A.P.1
Dolginov, L.M.2
Eliseev, P.G.3
Mel'Vidskii, M.G.4
Sverdlov, B.N.5
Shevchenko, E.G.6
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33
-
-
0017554778
-
Low-threshold laser with In-Ga-As-P heterostructure
-
Zh. I. Alferov, A. T. Gorelenok, P. S. Kop'ev, V. N. Mdivani, and V. K. Tibilov, Low-threshold laser with In-Ga-As-P heterostructure, Sov. Tech. Phys. Lett. 3(11), 481-482 (1977).
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Sov. Tech. Phys. Lett.
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, Issue.11
, pp. 481-482
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Alferov, Zh.I.1
Gorelenok, A.T.2
Kop'Ev, P.S.3
Mdivani, V.N.4
Tibilov, V.K.5
-
35
-
-
0343142543
-
z (x ∼ 0.12, z ∼ 0.26) DH laser with multiple thin layer (<500 Å) active region
-
z (x ∼ 0.12, z ∼ 0.26) DH laser with multiple thin layer (<500 Å) active region, Appl. Phys. Lett. 31, 288 (1977).
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Appl. Phys. Lett.
, vol.31
, pp. 288
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-
Rezek, E.A.1
Holonyak Jr., N.2
Vojak, V.A.3
Stillman, G.E.4
Rossi, J.A.5
Keune, D.L.6
Fairing, J.D.7
-
37
-
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20944448311
-
-6 cm active regions
-
-6 cm active regions, Sov. Phys. Semicond. 19(6), 679-683 (1985).
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(1985)
Sov. Phys. Semicond.
, vol.19
, Issue.6
, pp. 679-683
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Alferov, Zh.I.1
Garbuzov, D.Z.2
Arsent'Ev, I.N.3
Ber, B.Ya.4
Vavilova, L.S.5
Krasovskii, V.V.6
Chydinov, A.V.7
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38
-
-
33744939800
-
Periodic multilayer In-Ga-As-P structures fabricated by liquid-phase epitaxy
-
I. N. Arsent'ev, N. A. Bert, A. V. Vasil'ev, D. Z. Garbuzov, E. V. Zhuravkevich, S. G. Konnikov, A. O. Kosogov, A. V. Kochergin, N. N. Faleev, and L. I. Flaks, Periodic multilayer In-Ga-As-P structures fabricated by liquid-phase epitaxy, Sov. Tech. Phys. Lett. 14(4), 264-266 (1988).
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Sov. Tech. Phys. Lett.
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, pp. 264-266
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Arsent'Ev, I.N.1
Bert, N.A.2
Vasil'Ev, A.V.3
Garbuzov, D.Z.4
Zhuravkevich, E.V.5
Konnikov, S.G.6
Kosogov, A.O.7
Kochergin, A.V.8
Faleev, N.N.9
Flaks, L.I.10
-
39
-
-
0021414098
-
Injection InGaAsP/InPlasers with threshold current density 0.5 kA/cm2 at 300 K
-
L. M. Dolginov, A. E. Drakin, P. G. Eliseev, B. M. Sverdlov, V. A. Skripkin, and E. G. Shevchenko, Injection InGaAsP/InPlasers with threshold current density 0.5 kA/cm2 at 300 K, Sov. J. Quantum Electronics 14(4), 439-441 (1984).
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(1984)
Sov. J. Quantum Electronics
, vol.14
, Issue.4
, pp. 439-441
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-
Dolginov, L.M.1
Drakin, A.E.2
Eliseev, P.G.3
Sverdlov, B.M.4
Skripkin, V.A.5
Shevchenko, E.G.6
-
40
-
-
0021522411
-
Injection separate-confinement InGaAsP/InP double heterostructure lasers with a threshold 300 A/cm2 (samples cleaved along four sides, λ = 1.25 μm, T = 300 K)
-
Zh. I. Alferov, I. N. Arsent'ev, D. Z. Garbuzov, V. P. Evtikhiev, O. V. Sulima, V. P. Chaliy, and A. V. Chudinov, Injection separate-confinement InGaAsP/InP double heterostructure lasers with a threshold 300 A/cm2 (samples cleaved along four sides, λ = 1.25 μm, T = 300 K), Sov. Phys. Semicond. 18(11), 1281-1283 (1984).
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(1984)
Sov. Phys. Semicond.
, vol.18
, Issue.11
, pp. 1281-1283
-
-
Alferov, Zh.I.1
Arsent'Ev, I.N.2
Garbuzov, D.Z.3
Evtikhiev, V.P.4
Sulima, O.V.5
Chaliy, V.P.6
Chudinov, A.V.7
-
41
-
-
33744941659
-
Continuous-wave injection laser with an output power of 60 mW (λ = 1.35 μ, T = 300 K) based on a separate-confinement InGaAsP double heterostructure formed by liquid epitaxy
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