Low temperature crystallization behavior of α-Si3N 4 from Ti-doped amorphous silicon nitride derived from polytitanasilazanes

Journal of the Ceramic Society of Japan

Volumn 114, Issue 1330, 2006, Pages 502-506

  Sato, Koji ^a   Saitoh, Tomohiro ^a   Nagano, Takayuki ^a   Iwamoto, Yuji ^a  

^a JAPAN FINE CERAMICS CENTER   (Japan)

Author keywords

Crystallization; Polymer precursor; Polysilazane; Silicon nitride; Titanium

Indexed keywords

AMORPHOUS MATERIALS; CERAMIC MATERIALS; CRYSTALLIZATION; DOPING (ADDITIVES); FOURIER TRANSFORM INFRARED SPECTROSCOPY; NUCLEAR MAGNETIC RESONANCE; TITANIUM; X RAY DIFFRACTION ANALYSIS;

POLYMER PRECURSOR; POLYSILAZANES; POLYTITANASILAZANES; TETRAHEDRAL UNITS;

SILICON NITRIDE;

EID: 33744916990     PISSN: 09145400     EISSN: 13486535     Source Type: Journal    
DOI: 10.2109/jcersj.114.502     Document Type: Article

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