Complementary growth technique promises improved LED performance

Compound Semiconductor

Volumn 12, Issue 4, 2006, Pages 23-25

  Solomon, Glenn ^a  

^a NATIONAL INSTITUTE OF STANDARDS AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COMPLEMENTARY GROWTH TECHNIQUE; DIAMETER SAPPHIRE; GAN-RELATED DEVICES;

DEFECTS; GALLIUM NITRIDE; METALLORGANIC VAPOR PHASE EPITAXY; SAPPHIRE; SEMICONDUCTING FILMS; SUBSTRATES; VAPOR PHASE EPITAXY;

LIGHT EMITTING DIODES;

EID: 33744824893     PISSN: 1096598X     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Review

References (0)